公开(公告)号：US20170200740A1

公开(公告)日：2017-07-13

申请号：US15460161

申请日：2017-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung Kang ,  Seung-Hwan Cho ,  Yoon-Ho Khang ,  Jong-Chan Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor pattern formed on a substrate, the semiconductor pattern being formed of an oxide semiconductor and including a source area, a drain area, and an intermediate area that is formed between the source area and the drain area and includes a plurality of first areas and a second area having higher conductivity than the first areas; a first insulating pattern formed to cover at least the first areas; a second insulating film formed to face the second area, the source area and the drain area; a gate electrode formed on the semiconductor pattern and insulated from the semiconductor pattern by the first insulating pattern and the second insulating film; and source and drain electrodes insulated from the gate electrode and being in contact with the source area and the drain area.

公开(公告)号：US09666602B2

公开(公告)日：2017-05-30

申请号：US13828990

申请日：2013-03-14

Applicant: Samsung Display Co., LTD.

Inventor： Ji-Seon Lee ,  Dong-Jo Kim ,  Yoon-Ho Khang ,  Yong-Su Lee ,  Jong-Chan Lee

IPC: H01L33/08 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.

公开(公告)号：US09252284B2

公开(公告)日：2016-02-02

申请号：US14182989

申请日：2014-02-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Chan Lee ,  Yoon-Ho Khang ,  Su-Hyoung Kang ,  Dong-Jo Kim ,  Ji-Seon Lee ,  Myoung-Geun Cha ,  Deuk-Myung Ji

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693

Abstract: A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.

Abstract translation: 公开了显示基板和显示基板的制造方法。 在该方法中，在基底基板上形成栅电极。 使用氧化物半导体形成有源图案。 有源图案部分地与栅电极重叠。 在活性图案上依次形成第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案和第二绝缘层图案与栅电极重叠。 形成第三绝缘层以覆盖有源图案，第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案或第二绝缘层图案都包括氧化铝。 形成第一绝缘层图案和第二绝缘层图案包括使用栅电极进行背面曝光处理作为曝光掩模。

公开(公告)号：US20150102336A1

公开(公告)日：2015-04-16

申请号：US14195806

申请日：2014-03-03

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung Kang ,  Seung-Hwan Cho ,  Yoon-Ho Khang ,  Jong-Chan Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor pattern formed on a substrate, the semiconductor pattern being formed of an oxide semiconductor and including a source area, a drain area, and an intermediate area that is formed between the source area and the drain area and includes a plurality of first areas and a second area having higher conductivity than the first areas; a first insulating pattern formed to cover at least the first areas; a second insulating film formed to face the second area, the source area and the drain area; a gate electrode formed on the semiconductor pattern and insulated from the semiconductor pattern by the first insulating pattern and the second insulating film; and source and drain electrodes insulated from the gate electrode and being in contact with the source area and the drain area.

Abstract translation: 薄膜晶体管包括形成在基板上的半导体图案，所述半导体图案由氧化物半导体形成并且包括源极区域，漏极区域和形成在源极区域和漏极区域之间的中间区域，并且包括 多个第一区域和具有比第一区域更高的导电性的第二区域; 形成为至少覆盖所述第一区域的第一绝缘图案; 形成为面对所述第二区域，所述源极区域和所述漏极区域的第二绝缘膜; 形成在所述半导体图案上并通过所述第一绝缘图案和所述第二绝缘膜与所述半导体图案绝缘的栅电极; 以及与栅电极绝缘并与源极区域和漏极区域接触的源极和漏极电极。

公开(公告)号：US09921794B2

公开(公告)日：2018-03-20

申请号：US15015159

申请日：2016-02-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong-Chan Lee ,  So-Young Koo ,  Myoung-Geun Cha ,  Yoon-Ho Khang ,  Myoung-Hwa Kim ,  Woong-Hee Jeong

IPC: G06F3/14 ,  G09G3/20

CPC classification number: G06F3/1446 ,  G09G3/20 ,  G09G2300/026 ,  G09G2310/0232 ,  G09G2320/0233

Abstract: A blind display device includes a plurality of curved display panels, a support, and a plurality of rotators. Each of the curved display panels includes a curved display area between a flat display area and a bezel area. The support guides movement of the curved display panels. The rotators couple corresponding ones of the curved display panels to the support and rotate corresponding ones of the curved display panels.