公开(公告)号：US10418431B2

公开(公告)日：2019-09-17

申请号：US15416653

申请日：2017-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang Park ,  Joo-Hee Jeon ,  Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hui-Won Yang ,  Eun-Young Lee

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L29/786 ,  H01L27/12 ,  H01L29/51

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

公开(公告)号：US20150243793A1

公开(公告)日：2015-08-27

申请号：US14620907

申请日：2015-02-12

Applicant: Samsung Display Co., Ltd.

Inventor： Woong-Hee Jeong ,  Sun-Kwang Kim ,  Hyeon-Sik Kim ,  Byung-Du Ahn ,  Chaun-Gi Choi

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.

Abstract translation: 薄膜晶体管包括栅电极，栅极绝缘层，氧化物半导体层，氧化物缓冲层，保护层以及源极和漏极。 栅电极形成在基板上。 栅极绝缘层形成在基板上。 氧化物半导体层形成在栅极绝缘层上并且包括源极，沟道和漏极区。 氧化物缓冲层形成在氧化物半导体层上，其载流子浓度低于氧化物半导体层的载流子浓度。 保护层形成在氧化物缓冲层和栅极绝缘层上，并且在其中形成有接触孔，使得源极和漏极区域中的氧化物缓冲层暴露在其中。 源电极和漏电极通过接触孔与源区和漏区中的氧化物缓冲层耦合。

公开(公告)号：US09570624B2

公开(公告)日：2017-02-14

申请号：US14620907

申请日：2015-02-12

Applicant: Samsung Display Co., Ltd.

Inventor： Woong-Hee Jeong ,  Sun-Kwang Kim ,  Hyeon-Sik Kim ,  Byung-Du Ahn ,  Chaun-Gi Choi

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.

Abstract translation: 薄膜晶体管包括栅电极，栅极绝缘层，氧化物半导体层，氧化物缓冲层，保护层以及源极和漏极。 栅电极形成在基板上。 栅极绝缘层形成在基板上。 氧化物半导体层形成在栅极绝缘层上并且包括源极，沟道和漏极区。 氧化物缓冲层形成在氧化物半导体层上，其载流子浓度低于氧化物半导体层的载流子浓度。 保护层形成在氧化物缓冲层和栅极绝缘层上，并且在其中形成有接触孔，使得源极和漏极区域中的氧化物缓冲层暴露在其中。 源电极和漏电极通过接触孔与源区和漏区中的氧化物缓冲层耦合。

公开(公告)号：US20150144952A1

公开(公告)日：2015-05-28

申请号：US14521274

申请日：2014-10-22

Applicant: Samsung Display Co., Ltd.

Inventor： Sun-Kwang Kim ,  Chaun-Gi Choi ,  Dong-Han Kang ,  Jae-Sik Kim ,  Hyeon-Sik Kim ,  Woong-Hee Jeong

IPC: H01L27/32 ,  H01L29/45 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display substrate, method of manufacturing the same, and a display device including the same are disclosed. In one aspect, a display substrate includes a first gate electrode formed on a base substrate, a scan line electrically connected to the first gate electrode, a gate insulation layer, an etch stop layer and a passivation layer formed on the base substrate to at least partially overlap the first gate electrode and the scan line, and a data line formed on the passivation layer to at least partially overlap the scan line.

Abstract translation: 公开了一种显示基板及其制造方法及包括该显示基板的显示装置。 在一个方面，一种显示基板包括形成在基底基板上的第一栅极电极，至少与第一栅电极电连接的扫描线，栅绝缘层，蚀刻停止层和形成在基底基板上的钝化层 部分地与第一栅电极和扫描线重叠，以及形成在钝化层上以与扫描线至少部分重叠的数据线。

公开(公告)号：US11626461B2

公开(公告)日：2023-04-11

申请号：US17338577

申请日：2021-06-03

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang Park ,  Joo-Hee Jeon ,  Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hui-Won Yang ,  Eun-Young Lee

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L29/786 ,  H01L27/12 ,  H01L29/51

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

公开(公告)号：US11056551B2

公开(公告)日：2021-07-06

申请号：US16556166

申请日：2019-08-29

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang Park ,  Joo-Hee Jeon ,  Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hui-Won Yang ,  Eun-Young Lee

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L29/786 ,  H01L27/12 ,  H01L29/51

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

公开(公告)号：US10068923B2

公开(公告)日：2018-09-04

申请号：US15190919

申请日：2016-06-23

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hye-Young Park ,  Hye-Hyang Park ,  Hui-Won Yang ,  Eun-Young Lee ,  Joo-Hee Jeon ,  Su-Kyoung Yang ,  Chan-Woo Yang

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

公开(公告)号：US09685122B2

公开(公告)日：2017-06-20

申请号：US14548124

申请日：2014-11-19

Applicant: Samsung Display Co., Ltd.

Inventor： Ji-Hun Lim ,  Hyeon-Sik Kim ,  Yeon-Gon Mo ,  Byung-Du Ahn ,  Hyang-Shik Kong

IPC: G09G3/36 ,  G09G3/02 ,  H01L27/144 ,  H01L27/12 ,  H01L29/786 ,  G06F3/041 ,  G06F3/042

CPC classification number: G09G3/3607 ,  G06F3/0412 ,  G06F3/042 ,  G09G3/02 ,  G09G3/3648 ,  G09G2300/0809 ,  G09G2360/141 ,  G09G2360/142 ,  G09G2360/144 ,  G09G2360/145 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1446 ,  H01L29/7869

Abstract: A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.

公开(公告)号：US09502246B2

公开(公告)日：2016-11-22

申请号：US14455805

申请日：2014-08-08

Applicant: Samsung Display Co., Ltd. ,  University-Industry Foundation (UIF), Yonsei University

Inventor： Yeon-Hong Kim ,  Byung-Du Ahn ,  Hyeon-Sik Kim ,  Yeon-Gon Mo ,  Ji-Hun Lim ,  Hyun-Jae Kim

IPC: H01L21/02

CPC classification number: H01L21/02664 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L2227/323

Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.

Abstract translation: 可以提供形成氧化物半导体器件的方法。 在该方法中，可以提供包括第一主表面和远离第一主表面的第二主表面的基板。 可以在第一主表面上形成氧化物半导体器件以提供中间器件，并且半导体器件可以包括氧化物有源层。 中间装置可以经受第一阶段的紫外线（UV）光（例如紫外线照射处理），并进行第二时段的加热（例如热处理）。 第一和第二周期可以至少部分重叠。