Abstract:
An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.
Abstract:
A method of manufacturing a display panel includes forming a circuit layer including a gate, a source, and a drain on a base substrate and forming a light emitting element layer on the circuit layer. The forming of the circuit layer includes sequentially forming a preliminary metal layer, a preliminary oxide layer comprising molybdenum and tantalum, and a preliminary capping layer which comprise a preliminary electrode layer, cleaning the preliminary electrode layer, forming a photoresist layer pattern on the preliminary electrode layer, etching the preliminary electrode layer, and removing the photoresist layer pattern. During the etching of the preliminary electrode layer, a ratio between a removal speed ER1 of the preliminary oxide layer and a removal speed ER2 of the preliminary metal layer satisfies Equation 1 to maintain a low reflection property 1≤ER2/ER1≤3. [Equation 1]
Abstract:
An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to about 5 wt % of an azole compound, from about 0.1 to about 5 wt % of an electron-donating compound, from about 0.1 to about 5 wt % of a chlorine compound, from about 0.05 to about 3 wt % of a copper salt, from about 0.1 to about 10 wt % of an organic acid or an organic acid salt, and a remaining amount of water.
Abstract:
A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.
Abstract:
A display apparatus includes a base substrate, a pixel on the base substrate, and a color filter part between the base substrate and the pixel. The pixel includes a cover layer defining a TSC (Tunnel Shaped Cavity) on the base substrate, an image display part provided in the TSC, and first and second electrodes which apply an electric field to the image display part.