公开(公告)号：US20230413620A1

公开(公告)日：2023-12-21

申请号：US18460345

申请日：2023-09-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Eunhyun KIM ,  Eunhye KO ,  Yeonhong KIM ,  Kyoungwon LEE ,  Sunhee LEE ,  Junhyung LIM

IPC: H10K59/126 ,  H10K59/131

CPC classification number: H10K59/126 ,  H10K59/131 ,  H10K77/111

Abstract: A display apparatus in which an area of a peripheral area may be reduced while having a simple structure, the display apparatus includes a substrate, a bottom metal layer on the substrate and including a first extension line extending from the peripheral area outside a display area into the display area, a semiconductor layer on the bottom metal layer, a gate layer on the semiconductor layer, a first metal layer on the gate layer, and a second metal layer on the first metal layer and including a first data line extending from the peripheral area into the display area and electrically coupled to the first extension line in the peripheral area.

公开(公告)号：US20220036824A1

公开(公告)日：2022-02-03

申请号：US17413617

申请日：2018-12-18

Applicant: Samsung Display Co., Ltd.

Inventor： Sunhee LEE ,  Seryeong KIM ,  Eunhye KO ,  Eoksu KIM ,  Eunhyun KIM

IPC: G09G3/3233 ,  G09G3/3266 ,  G09G3/3275

Abstract: A pixel circuit includes an organic light emitting element, a switching transistor configured to be turned on or off in response to a scan signal, a storage capacitor configured to store a data signal applied through a data line when the switching transistor is turned on, a driving transistor configured to allow a driving current corresponding to the data signal stored in the storage capacitor to flow into the organic light emitting element, and an emission control transistor implemented by an oxide thin film transistor, connected in series to the organic light emitting element and the driving transistor between a high power voltage and a low power voltage, and configured to be turned on or off in response to an emission control signal. The pixel circuit performs a back-biasing operation that compensates for a change in a threshold voltage of the emission control transistor by applying a back-biasing voltage to the emission control transistor.

公开(公告)号：US20180040639A1

公开(公告)日：2018-02-08

申请号：US15654005

申请日：2017-07-19

Applicant: Samsung Display Co., Ltd.

Inventor： Sunhee LEE ,  Seryeong KIM ,  Eunhyun KIM

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L27/1229 ,  H01L27/1237 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3272 ,  H01L2227/323

Abstract: A semiconductor device includes a base substrate, a first thin film transistor disposed on the base substrate, a second thin film transistor disposed on the base substrate, and a plurality of insulating layers disposed on the base substrate. The first thin film transistor includes a first input electrode, a first output electrode, a first control electrode, and a first oxide semiconductor pattern, which are disposed on the base substrate. The second thin film transistor includes a second input electrode, a second output electrode, a second control electrode, and a second oxide semiconductor pattern, which are disposed on the base substrate. The first oxide semiconductor pattern includes a crystalline oxide semiconductor, and the second oxide semiconductor pattern includes an oxide semiconductor having a crystal structure different from a crystal structure of the first oxide semiconductor pattern.