Abstract:
An organic light emitting diode (OLED) display includes a substrate, a thin film transistor disposed on the substrate, a first electrode disposed on the thin film transistor and electrically connected to the thin film transistor, a first auxiliary layer disposed on the first electrode, an emission layer disposed on the first auxiliary layer, an electron transport layer disposed on the emission layer, a first buffer layer disposed on the electron transport layer, and a second electrode disposed on the first buffer layer.
Abstract:
An organic light-emitting display device includes a substrate which includes a plurality of areas, a plurality of first electrodes disposed on the areas of the substrate, respectively, a second electrode disposed on the first electrodes, and a plurality of emitting layers disposed between the first electrodes and the second electrode. At least two of the emitting layers are disposed on all of the areas.
Abstract:
A touch sensing unit, includes a plurality of first sensing electrodes and a plurality of second sensing electrodes intersecting with and insulated from the plurality of first sensing electrodes. The plurality of first sensing electrodes includes a plurality of first sensor portions and a plurality of first connection portions connecting each of the plurality of first sensor portions with one another. The plurality of second sensing electrodes includes a plurality of second sensor portions, a plurality of stem sensors extended from the plurality of second sensor portions, and a plurality of second connection portions connecting each of the plurality of sensor portions with one another. Each of the plurality of first sensor portions includes a plurality of depressions indented inwardly. Each of the plurality of stem sensors is disposed such that it is at least partially surrounded by a respective depression of the plurality of depressions.
Abstract:
A method of fabricating an organic light emitting device includes forming a first electrode layer on a substrate, surface-treating the first electrode layer with CF4 plasma, forming a first common layer containing pentacene on the surface-treated first electrode layer, forming an organic light emitting layer on the first common layer, forming a second common layer on the organic light emitting layer, and forming a second electrode layer on the second common layer. The CF4 plasma treatment enhances the luminous efficiency of the organic light emitting device.
Abstract:
A touch sensing unit, includes a plurality of first sensing electrodes and a plurality of second sensing electrodes intersecting with and insulated from the plurality of first sensing electrodes. The plurality of first sensing electrodes includes a plurality of first sensor portions and a plurality of first connection portions connecting each of the plurality of first sensor portions with one another. The plurality of second sensing electrodes includes a plurality of second sensor portions, a plurality of stem sensors extended from the plurality of second sensor portions, and a plurality of second connection portions connecting each of the plurality of sensor portions with one another. Each of the plurality of first sensor portions includes a plurality of depressions indented inwardly. Each of the plurality of stem sensors is disposed such that it is at least partially surrounded by a respective depression of the plurality of depressions.
Abstract:
An organic light emitting display includes: a substrate; a first electrode on the substrate; an organic light emitting layer on the first electrode; a second electrode formed on the organic light emitting layer; a non-resonance reflection inducing layer on the second electrode; and a capping layer on the non-resonance reflection inducing layer.
Abstract:
An organic light emitting display includes: a substrate; a first electrode on the substrate; an organic light emitting layer on the first electrode; a second electrode formed on the organic light emitting layer; a non-resonance reflection inducing layer on the second electrode; and a capping layer on the non-resonance reflection inducing layer.
Abstract:
A touch sensing unit, includes a plurality of first sensing electrodes and a plurality of second sensing electrodes intersecting with and insulated from the plurality of first sensing electrodes. The plurality of first sensing electrodes includes a plurality of first sensor portions and a plurality of first connection portions connecting each of the plurality of first sensor portions with one another. The plurality of second sensing electrodes includes a plurality of second sensor portions a plurality of stem sensors extended from the plurality of second sensor portions, and a plurality of second connection portions connecting each of the plurality of sensor portions with one another. Each of the plurality of first sensor portions includes a plurality of depressions indented inwardly. Each of the plurality of stem sensors is disposed such that it is at least partially surrounded by a respective depression of the plurality of depressions.
Abstract:
A display device including: a first substrate including a display area and a peripheral area; a display part disposed on the first substrate and to include a plurality of pixels; a second substrate disposed on the display part; and an inorganic layer disposed on the second substrate. The inorganic layer may include an opening, and the opening overlaps the display area and the peripheral area.
Abstract:
A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.