公开(公告)号：US20140346460A1

公开(公告)日：2014-11-27

申请号：US14065085

申请日：2013-10-28

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Moon KANG ,  Jong-Hyun CHOI ,  Byung-Soo SO ,  Yong-Duck SON ,  Jin-Wook SEO

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3279 ,  H01L27/124 ,  H01L27/3248

Abstract: An organic light emitting diode display device is disclosed. The device includes, for example, a thin film transistor with an active layer on a substrate, a gate electrode, a source electrode, and a drain electrode, a pixel electrode formed on the same layer as the gate electrode, an electrode pattern partially exposing the pixel electrode and formed on the pixel electrode, a pixel electrode contact formed between the electrode pattern and the drain electrode and electrically connected to the drain electrode, a pixel defining film exposing the pixel electrode and formed to cover the drain electrode and the source electrode, an intermediate layer formed on the exposed pixel electrode and comprising an emissive layer, and an opposite electrode formed opposite the pixel electrode to at least partially cover the intermediate layer. A method of manufacturing the device is also disclosed.

Abstract translation: 公开了一种有机发光二极管显示装置。 该器件例如包括在衬底上具有有源层的薄膜晶体管，栅电极，源电极和漏电极，形成在与栅电极相同的层上的像素电极，电极图案部分曝光 所述像素电极形成在所述像素电极上，形成在所述电极图案和所述漏电极之间并与所述漏电极电连接的像素电极接触件，所述像素限定膜暴露所述像素电极并形成为覆盖所述漏电极和所述源电极 形成在所述曝光的像素电极上并且包括发光层的中间层和与所述像素电极相对形成以至少部分地覆盖所述中间层的相对电极。 还公开了一种制造该器件的方法。

公开(公告)号：US20160233289A1

公开(公告)日：2016-08-11

申请号：US15016241

申请日：2016-02-04

Applicant: Samsung Display Co., LTD.

Inventor： Yong-Duck SON ,  Ji-Youn LEE ,  Dae-Woo LEE ,  Jae Beom CHOI

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L27/3258 ,  H01L27/326 ,  H01L51/52 ,  H01L2251/558

Abstract: A transparent display substrate including a base substrate having a pixel area and a transmission area, a thickness of the base substrate at the transmission area being less than a thickness of the base substrate at the pixel area, a pixel circuit at the pixel area of the base substrate, an insulation structure covering the pixel circuit, the insulation structure having an opening or a concave portion at the transmission area of the base substrate, and a pixel electrode at the pixel area of the base substrate and extending at least partially through the insulation structure to be electrically connected to the pixel circuit.

Abstract translation: 一种透明显示基板，包括具有像素区域和透射区域的基底基板，所述基底基板在所述透射区域处的厚度小于所述像素区域处的所述基板的厚度，所述像素区域处的像素电路 基底衬底，覆盖像素电路的绝缘结构，在基底衬底的透射区域具有开口或凹部的绝缘结构，以及在基底衬底的像素区域处的像素电极，并且至少部分延伸穿过绝缘体 结构电连接到像素电路。

公开(公告)号：US20150001523A1

公开(公告)日：2015-01-01

申请号：US14490725

申请日：2014-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Keon PARK ,  Jong-Ryuk PARK ,  Yun-Mo CHUNG ,  Tak-Young LEE ,  Jin-Wook SEO ,  Ki-Yong LEE ,  Min-Jae JEONG ,  Yong-Duck SON ,  Byung-Soo SO ,  Seung-Kyu PARK ,  Dong-Hyun LEE ,  Kil-Won LEE ,  Jae-Wan Jung

IPC: H01L27/32 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract translation: 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。