THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号:US20150008437A1

    公开(公告)日:2015-01-08

    申请号:US14495835

    申请日:2014-09-24

    Abstract: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.

    Abstract translation: 提供薄膜晶体管。 根据本发明的示例性实施例的薄膜晶体管包括:基板; 栅极线,设置在所述基板上并且包括栅电极; 半导体层,设置在所述基板上,并且至少包括与所述栅电极重叠的部分; 设置在所述栅极线和所述半导体层之间的栅极绝缘层; 以及设置在所述基板上并且在所述半导体层的沟道区域上彼此面对的源电极和漏电极。 栅极绝缘层包括第一区域和第二区域,第一区域对应于半导体层的沟道区域,第一区域由第一材料制成,第二区域由第二材料制成,第一材料 并且第二材料具有不同的碳和硅原子数比。

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20150162349A1

    公开(公告)日:2015-06-11

    申请号:US14456154

    申请日:2014-08-11

    CPC classification number: H01L27/124 G02F1/134363 G02F1/136227 H01L27/1259

    Abstract: A thin film transistor array panel includes: a substrate; a gate line and a common voltage line on the substrate and electrically separated from each other; a gate insulating layer on the gate line and the common voltage line; a first passivation layer on the gate insulating layer; a common electrode on the first passivation layer; a second passivation layer on the common electrode; and a pixel electrode and a connecting member on the second passivation layer and electrically separated from each other. A first contact hole and a second contact hole are defined in the first and second passivation layers. The pixel electrode and the drain electrode are connected to each other through the second contact hole. The connecting member and the common electrode are connected to each other through the first contact hole.

    Abstract translation: 薄膜晶体管阵列面板包括:基板; 栅极线和公共电压线,并且彼此电分离; 栅极线和公共电压线上的栅极绝缘层; 栅极绝缘层上的第一钝化层; 在第一钝化层上的公共电极; 公共电极上的第二钝化层; 以及第二钝化层上的像素电极和连接构件,并且彼此电分离。 在第一钝化层和第二钝化层中限定第一接触孔和第二接触孔。 像素电极和漏极通过第二接触孔相互连接。 连接构件和公共电极通过第一接触孔彼此连接。

    DISPLAY PANEL AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20230116218A1

    公开(公告)日:2023-04-13

    申请号:US17941785

    申请日:2022-09-09

    Abstract: A display panel includes a first substrate including a first base substrate, a second substrate and a filling pattern. The first base substrate includes a display area including a plurality of pixel areas for image display and a non-display area around the display area, and an align key pattern including an opaque material in a part of the non-display area. The second substrate includes a second base substrate overlapping the first base substrate and including a transparent material, a light blocking structure in the non-display area, and a hole overlapping the align key pattern and penetrating the light blocking structure. The filling pattern is configured to fill the hole.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    显示装置及其制造方法

    公开(公告)号:US20150162251A1

    公开(公告)日:2015-06-11

    申请号:US14253040

    申请日:2014-04-15

    Abstract: A display device includes a first insulating substrate including a display area, a peripheral area and a test area, a gate conductor including a test element group gate electrode, a gate electrode and a gate line on the first insulating substrate, a gate insulating layer on the gate conductor, a semiconductor layer including a test element group semiconductor layer and a pixel semiconductor layer on the gate insulating layer, a data conductor including a test element group source electrode, a test element group drain electrode, a data line including a source electrode, and a drain electrode on the semiconductor layer, a first passivation layer on the data conductor, a test element group common electrode and a pixel common electrode on the first passivation layer, a second passivation layer on the test element group common electrode and the pixel common electrode, and a pixel electrode on the second passivation layer.

    Abstract translation: 显示装置包括:第一绝缘基板,包括显示区域,外围区域和测试区域;在第一绝缘基板上包括测试元件组栅电极,栅极电极和栅极线的栅极导体,栅绝缘层, 栅极导体,包括测试元件组半导体层和栅极绝缘层上的像素半导体层的半导体层,包括测试元件组源电极,测试元件组漏电极,包括源电极的数据线的数据导体 以及半导体层上的漏电极,数据导体上的第一钝化层,第一钝化层上的测试元件组公共电极和像素公共电极,测试元件组公共电极上的第二钝化层和像素 公共电极和第二钝化层上的像素电极。

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