Abstract:
A deposition apparatus includes: a chamber; a deposition source disposed in the chamber to include nozzles arranged in a first direction; and a deposition angle limiter disposed on the deposition source in the chamber. The deposition angle limiter includes: a low-incident angle limiting plate disposed between adjacent first and second nozzles among the nozzles and spaced apart from the first nozzle by a first height in a height direction intersecting the first direction; and a high-incident angle limiting plate surrounding at least a portion of the first nozzle and spaced apart from the first nozzle by a second height in the height direction. The first nozzle extends in the height direction.
Abstract:
An electrostatic chuck unit includes a first wiring portion configured to generate a relatively weak electrostatic force and a second wiring portion configured to generate a relatively strong electrostatic force.
Abstract:
A mask assembly for thin film deposition including a mask frame defining and surrounding an opening, and a mask coupled to the mask frame and having a plurality of deposition pattern units formed in a longitudinal direction of the mask and spaced apart from each other. The respective deposition pattern units include a deposition area, and each deposition area is divided into a plurality of pattern portions.
Abstract:
A mask frame assembly including a frame including a first opening, a first mask including second openings that each has an area smaller than the first opening and a first surface having portions of the first surface connected to the frame. The mask frame assembly includes second masks disposed on a second surface of the first mask extending across the first opening in a first direction and arranged in a second direction that is substantially perpendicular. The second masks include pattern parts having a shape corresponding to the second openings. The pattern parts each include pattern holes configured to allow a deposition material to pass through. The second masks include a rib part disposed between the pattern parts. The rib part includes dummy holes each having an area greater than each of the pattern holes. The first mask is configured to block the deposition material passing through the dummy holes.
Abstract:
An apparatus for manufacturing a display apparatus includes a substrate. A mask assembly includes an opening, a mask frame surrounding the opening, and at least one mask coupled to the mask frame. An electrostatic chuck is configured to attach the substrate to the at least one mask. A first driver is configured to drive the electrostatic chuck. At least a partial portion of the mask frame does not overlap the electrostatic chuck in a thickness direction of the substrate.
Abstract:
A deposition mask assembly including: a frame, a pair of auxiliary masks and a deposition divided mask. The frame includes an opening area through which deposition material passes, and first, second, third and fourth side portions which collectively define the opening area. The pair of auxiliary masks are on the frame, fixed to the first and third side portions which face each other in a first direction with respect to the opening area thereof, and disposed respectively adjacent to the second and fourth side portions which face each other in a second direction crossing the first direction. The divided mask is spaced apart from each of the pair of auxiliary masks and fixed to the first and third side portions. In the second direction, a width of the pair of auxiliary masks is less than a width of the divided mask.
Abstract:
A mask frame assembly includes a frame, and a mask tensioned on the frame in a first direction, the mask having a deposition pattern portion having a plurality of pattern holes therethrough, a deposition material being deposited on a substrate through the pattern holes, and a dummy portion extending from the deposition pattern portion in the first direction, the dummy portion having an increased thickness in a second direction as a distance from the deposition pattern portion in the first direction increases, the second direction being oriented along a normal to the mask.