Pixel of an image sensor, and image sensor
    3.
    发明授权
    Pixel of an image sensor, and image sensor 有权
    图像传感器的像素和图像传感器

    公开(公告)号:US09385157B2

    公开(公告)日:2016-07-05

    申请号:US14633381

    申请日:2015-02-27

    IPC分类号: H01L27/146

    摘要: A pixel of an image sensor includes a photoelectric conversion region formed in a semiconductor substrate, a floating diffusion region formed in the semiconductor substrate, the floating diffusion region being spaced apart from the photoelectric conversion region, a vertical transfer gate extending from a first surface of the semiconductor substrate into a recess in the semiconductor substrate, and configured to form a transfer channel between the photoelectric conversion region and the floating diffusion region, and an impurity region surrounding the recess. The impurity region has a first impurity concentration at a region adjacent to a side of the recess, and a second impurity concentration higher than the first impurity concentration at a region adjacent to the bottom of the recess.

    摘要翻译: 图像传感器的像素包括形成在半导体衬底中的光电转换区域,形成在半导体衬底中的浮动扩散区域,浮动扩散区域与光电转换区域间隔开,垂直传输栅极从第一表面延伸 所述半导体基板成为所述半导体基板的凹部,并且被配置为在所述光电转换区域和所述浮动扩散区域之间形成传输沟道,以及围绕所述凹部的杂质区域。 所述杂质区在与所述凹部的一侧相邻的区域具有第一杂质浓度,并且在与所述凹部的底部相邻的区域处具有高于所述第一杂质浓度的第二杂质浓度。

    Unit Pixels for Image Sensors and Pixel Arrays Comprising the Same
    4.
    发明申请
    Unit Pixels for Image Sensors and Pixel Arrays Comprising the Same 有权
    图像传感器和像素阵列的单位像素包括它

    公开(公告)号:US20160056200A1

    公开(公告)日:2016-02-25

    申请号:US14615536

    申请日:2015-02-06

    IPC分类号: H01L27/146 H04N5/3745

    摘要: Provided are unit pixels for image sensors and pixel arrays including the same. The unit pixels include a first pixel including first and second photo diodes which are adjacent to each other, and a first deep trench isolation (DTI) fully surrounding sides of the first and second photo diodes and electrically separating the first pixel from other pixels adjacent to the first pixel. The first pixel includes a second DTI positioned between the first photo diode and the second photo diode and having one side formed to be spaced apart from the first DTI. The first pixel also includes a color filter positioned on the first and second photo diodes and fully overlapping the first and second photo diodes. The first pixel further includes a floating diffusion node electrically connected with the first and second photo diodes. The first and second photo diodes share one floating diffusion node.

    摘要翻译: 提供了用于图像传感器和包括其的像素阵列的单位像素。 单位像素包括包括彼此相邻的第一和第二光电二极管的第一像素和完全围绕第一和第二光电二极管的第一深沟槽隔离(DTI),并且将第一像素与与 第一个像素。 第一像素包括位于第一光电二极管和第二光电二极管之间并且具有形成为与第一DTI间隔开的一侧的第二DTI。 第一像素还包括位于第一和第二光电二极管上并与第一和第二光电二极管完全重叠的滤色器。 第一像素还包括与第一和第二光电二极管电连接的浮动扩散节点。 第一和第二光电二极管共享一个浮动扩散节点。

    METHOD OF MANUFACTURING IMAGE SENSORS
    5.
    发明申请
    METHOD OF MANUFACTURING IMAGE SENSORS 审中-公开
    制造图像传感器的方法

    公开(公告)号:US20150108555A1

    公开(公告)日:2015-04-23

    申请号:US14294413

    申请日:2014-06-03

    摘要: In a method of manufacturing an image sensor, a photodiode is formed in a substrate. The substrate is etched to form an opening vertically aligned with the photodiode. A gate insulation layer and a first preliminary polysilicon layer are formed on an inner surface of opening and a front surface of substrate. A first doping process is performed on first preliminary polysilicon layer to form first polysilicon layer, and the first polysilicon layer in the opening is uniformly doped with first conductivity type impurities. A second preliminary polysilicon layer is formed on first polysilicon layer. A second doping process is performed on second preliminary polysilicon layer to form second polysilicon layer doped with first conductivity type impurities. The first and second polysilicon layers are patterned to form a buried gate electrode in the opening. The first impurity region is formed at an upper portion of substrate adjacent to buried gate electrode.

    摘要翻译: 在制造图像传感器的方法中,在基板中形成光电二极管。 蚀刻衬底以形成与光电二极管垂直对准的开口。 在开口的内表面和基板的前表面上形成栅极绝缘层和第一初步多晶硅层。 在第一初步多晶硅层上进行第一掺杂工艺以形成第一多晶硅层,并且开口中的第一多晶硅层均匀地掺杂有第一导电类型的杂质。 在第一多晶硅层上形成第二初步多晶硅层。 在第二初步多晶硅层上执行第二掺杂工艺以形成掺杂有第一导电类型杂质的第二多晶硅层。 图案化第一和第二多晶硅层,以在开口中形成掩埋栅电极。 第一杂质区形成在与掩埋栅电极相邻的衬底的上部。

    Image sensor having pixels each with a deep trench isolation region as a photo gate for outputting image signals in response to control signals from a row driver and method of operating the image sensor
    6.
    发明授权
    Image sensor having pixels each with a deep trench isolation region as a photo gate for outputting image signals in response to control signals from a row driver and method of operating the image sensor 有权
    图像传感器具有各自具有深沟槽隔离区域作为光栅的像素,用于响应于来自行驱动器的控制信号和操作图像传感器的方法输出图像信号

    公开(公告)号:US09549140B2

    公开(公告)日:2017-01-17

    申请号:US14619176

    申请日:2015-02-11

    摘要: An image sensor includes a row driver, a pixel array, an analog-to-digital converter, and an output compensating circuit. The row driver generates a photo-gate control signal, a storage control signal, a transfer control signal, a reset control signal and a row selecting signal. The pixel array includes a plurality of pixels, and each pixel uses a deep trench isolation (DTI) region as a photo gate. The pixel array receives optical signals, converts the optical signals to electric signals, and outputs the electric signals as image signals in response to the photo-gate control signal, the storage control signal, the transfer control signal, the reset control signal, and the row selecting signal. The analog-to-digital converter performs an analog-to-digital conversion on the image signals to generate first signals, and the output compensating circuit compensates the first signals.

    摘要翻译: 图像传感器包括行驱动器,像素阵列,模数转换器和输出补偿电路。 行驱动器产生光栅控制信号,存储控制信号,传输控制信号,复位控制信号和行选择信号。 像素阵列包括多个像素,并且每个像素使用深沟槽隔离(DTI)区域作为光栅。 像素阵列接收光信号,将光信号转换为电信号,并响应于光栅控制信号,存储控制信号,传输控制信号,复位控制信号和视频信号输出电信号作为图像信号 行选择信号。 模数转换器对图像信号执行模数转换以产生第一信号,并且输出补偿电路补偿第一信号。

    IMAGE SENSOR AND METHOD OF OPERATING THE IMAGE SENSOR
    7.
    发明申请
    IMAGE SENSOR AND METHOD OF OPERATING THE IMAGE SENSOR 有权
    图像传感器和操作图像传感器的方法

    公开(公告)号:US20160021322A1

    公开(公告)日:2016-01-21

    申请号:US14619176

    申请日:2015-02-11

    IPC分类号: H04N5/378 H04N5/376

    摘要: An image sensor includes a row driver, a pixel array, an analog-to-digital converter, and an output compensating circuit. The row driver generates a photo-gate control signal, a storage control signal, a transfer control signal, a reset control signal and a row selecting signal. The pixel array includes a plurality of pixels, and each pixel uses a deep trench isolation (DTI) region as a photo gate. The pixel array receives optical signals, converts the optical signals to electric signals, and outputs the electric signals as image signals in response to the photo-gate control signal, the storage control signal, the transfer control signal, the reset control signal, and the row selecting signal. The analog-to-digital converter performs an analog-to-digital conversion on the image signals to generate first signals, and the output compensating circuit compensates the first signals.

    摘要翻译: 图像传感器包括行驱动器,像素阵列,模数转换器和输出补偿电路。 行驱动器产生光栅控制信号,存储控制信号,传输控制信号,复位控制信号和行选择信号。 像素阵列包括多个像素,并且每个像素使用深沟槽隔离(DTI)区域作为光栅。 像素阵列接收光信号,将光信号转换为电信号,并响应于光栅控制信号,存储控制信号,传输控制信号,复位控制信号和视频信号输出电信号作为图像信号 行选择信号。 模数转换器对图像信号执行模数转换以产生第一信号,并且输出补偿电路补偿第一信号。