公开(公告)号：US12165694B2

公开(公告)日：2024-12-10

申请号：US18223783

申请日：2023-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su Chang Jeon ,  Woohyun Kang ,  Seungkyung Ro ,  Sangkwon Moon ,  Heewon Lee

IPC: G06F3/06 ,  G11C11/408

Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.

公开(公告)号：US20250094062A1

公开(公告)日：2025-03-20

申请号：US18968373

申请日：2024-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Su Chang Jeon ,  Suhyun Kim ,  Hyuna Kim ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim ,  Byungkwan Chun

IPC: G06F3/06

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

公开(公告)号：US11934701B2

公开(公告)日：2024-03-19

申请号：US17722780

申请日：2022-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun Kang ,  Youngdeok Seo ,  Hyuna Kim ,  Hyunkyo Oh ,  Donghoo Lim

IPC: G06F3/06 ,  G11C7/10

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679 ,  G11C7/1051

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.

公开(公告)号：US20240012569A1

公开(公告)日：2024-01-11

申请号：US18184319

申请日：2023-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Su Chang Jeon ,  Suhyun Kim ,  Hyuna Kim ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim ,  Byungkwan Chun

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0679

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

公开(公告)号：US12182419B2

公开(公告)日：2024-12-31

申请号：US18184319

申请日：2023-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Su Chang Jeon ,  Suhyun Kim ,  Hyuna Kim ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim ,  Byungkwan Chun

IPC: G06F11/00 ,  G06F3/06

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

公开(公告)号：US20240177764A1

公开(公告)日：2024-05-30

申请号：US18223783

申请日：2023-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su Chang Jeon ,  Woohyun Kang ,  Seungkyung Ro ,  Sangkwon Moon ,  Heewon Lee

IPC: G11C11/408 ,  G06F3/06

CPC classification number: G11C11/4085 ,  G06F3/0614 ,  G06F3/0658 ,  G06F3/0659 ,  G06F3/0679 ,  G11C11/4087

Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.

公开(公告)号：US11817170B2

公开(公告)日：2023-11-14

申请号：US17723959

申请日：2022-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun Kang ,  Youngdeok Seo ,  Hyuna Kim ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim

IPC: G11C29/00 ,  G11C29/50

CPC classification number: G11C29/50004 ,  G11C2029/5004

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data include a first count value of a first read voltage and a second count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a first error count value for the first read voltage and a second error count value for the second read voltage, based on the OVS count data, and determining a subsequent operation, based on the first and second error count values.

公开(公告)号：US11775203B2

公开(公告)日：2023-10-03

申请号：US17376437

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdeok Seo ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin ,  Woohyun Kang ,  Shinho Oh

IPC: G06F3/00 ,  G06F3/06 ,  G06N3/08

CPC classification number: G06F3/0655 ,  G06F3/064 ,  G06F3/0604 ,  G06F3/0679 ,  G06N3/08

Abstract: A method of operating a nonvolatile memory device is provided. The method includes: dividing a memory block of a plurality of memory blocks provided in the nonvolatile memory device into a plurality of retention groups; generating time-difference information including a plurality of erase program interval (EPI) values corresponding to the plurality of retention groups; generating offset information including a plurality of offset values corresponding to differences between a plurality of default read voltages and a plurality of corrected read voltages; generating compensated read voltages corresponding to a read address based on the offset information and the time-difference information; and performing a read operation to read data from the nonvolatile memory device based on the read address and the compensated read voltages.

公开(公告)号：US12300335B2

公开(公告)日：2025-05-13

申请号：US17893476

申请日：2022-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuna Kim ,  Woohyun Kang ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim

IPC: G11C16/34 ,  G11C16/26

Abstract: Disclosed is a storage controller which includes a history table and communicates with a non-volatile memory device. A method of operating the storage controller includes determining whether history data of a target memory block are registered at the history table, providing a history read request for the target memory block based on the history data when it is determined that the history data are registered, receiving first raw data corresponding to the history read request from the non-volatile memory device, generating skew information of the target memory block based on the first raw data and the history data, and determining whether to perform a read reclaim operation of the target memory block, based on the skew information.

公开(公告)号：US12300325B2

公开(公告)日：2025-05-13

申请号：US18170893

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Jin-Young Kim ,  Hyuna Kim ,  Se Hwan Park ,  Youngdeok Seo ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim

IPC: G11C16/12 ,  G06F11/10 ,  G11C16/26

Abstract: A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.