公开(公告)号：US12302660B2

公开(公告)日：2025-05-13

申请号：US17952479

申请日：2022-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeon Noh ,  Kook Tae Kim ,  Jingyun Kim ,  Miseon Park ,  Jaewoong Lee

IPC: H01L27/146 ,  H10F39/00

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

公开(公告)号：US12272705B2

公开(公告)日：2025-04-08

申请号：US17239291

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Chang Kyu Lee ,  Dongmo Im ,  Ju-eun Kim ,  Miseon Park ,  Jungim Choe ,  Soojin Hong

IPC: H01L31/062 ,  H10F39/00

Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

公开(公告)号：US12237353B2

公开(公告)日：2025-02-25

申请号：US17667962

申请日：2022-02-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Miseon Park ,  Jaesung Hur

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.

公开(公告)号：US11837621B2

公开(公告)日：2023-12-05

申请号：US17182364

申请日：2021-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Ju-Eun Kim ,  Miseon Park ,  Jaewoong Lee ,  Soojin Hong

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14621

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

公开(公告)号：US20200111821A1

公开(公告)日：2020-04-09

申请号：US16400279

申请日：2019-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US20250006761A1

公开(公告)日：2025-01-02

申请号：US18393786

申请日：2023-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae Kim

IPC: H01L27/146

Abstract: An image sensor includes a substrate that includes a plurality of pixel areas, where the substrate includes a first surface and a second surface that are opposite to each other; and a device isolation pattern that extends from the first surface and into the substrate, where the device isolation pattern is between the plurality of pixel areas, where the device isolation pattern includes an intervening region, a crossing region, a first device isolation portion, and a second device isolation portion, where the intervening region includes: a first dielectric pattern; a conductive liner; and a second dielectric pattern, where the first dielectric pattern extends from the first device isolation portion and toward the second device isolation portion, and where the first device isolation portion includes the conductive liner and the second dielectric pattern.

公开(公告)号：US20220310676A1

公开(公告)日：2022-09-29

申请号：US17739682

申请日：2022-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Miseon Park ,  Jaesung Hur

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.

公开(公告)号：US11257857B2

公开(公告)日：2022-02-22

申请号：US16655762

申请日：2019-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Sung Hur ,  Jin Gyun Kim ,  Kook Tae Kim ,  Young Bin Lee ,  Ha Jin Lim ,  Taek Soo Jeon ,  Soo Jin Hong

IPC: H04N5/335 ,  H01L27/146

Abstract: An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.

公开(公告)号：US20200381464A1

公开(公告)日：2020-12-03

申请号：US16998202

申请日：2020-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US12243891B2

公开(公告)日：2025-03-04

申请号：US17518756

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Miseon Park ,  Soojin Hong

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface, a second surface opposite to the first surface, and unit pixels, a deep device isolation portion disposed in the substrate to isolate the unit pixels from each other, and a transfer gate disposed on the first surface and in each of the unit pixels. The deep device isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a first insulating pattern interposed between the first conductive pattern and the substrate, a second conductive pattern extending from the second surface toward the first conductive pattern, and a first fixed charge layer interposed between the second conductive pattern and the substrate.