公开(公告)号：US20190107569A1

公开(公告)日：2019-04-11

申请号：US15730486

申请日：2017-10-11

Applicant: QUALCOMM Incorporated

Inventor： David Kidd ,  Ardavan Moassessi ,  Angelo Pinto ,  Albert Kumar ,  Yi Lou ,  Bipin Duggal ,  Amar Gulhane ,  Michael Bourland ,  Mustafa Badaroglu ,  Paul Penzes

IPC: G01R31/02 ,  G01R31/28 ,  G01R31/36 ,  H01L21/66

Abstract: Aspects of the disclosure includes a transistor-under-test (TUT) to charge/discharge a capacitor; changing an oscillation state when a capacitor voltage crosses a threshold and turning OFF the TUT; discharging the capacitor using the TUT; commencing precharging the capacitor after detecting the capacitor reaches a transition voltage; commencing discharging the capacitor after a precharger time delay; sustaining a relaxation oscillator waveform, wherein the relaxation oscillator waveform is based on turning OFF/ON the TUT; and generating a digital representation of a TUT current associated with a relaxation oscillator period of the relaxation oscillator waveform. For example, a measurement tile includes a pulse generator to sustain the relaxation oscillator waveform with the relaxation oscillator period associated with an inverse TUT current; and a precharger charging a capacitor and the TUT charging/discharging the capacitor, wherein the relaxation oscillator waveform is based on turning OFF/ON the TUT in accordance with discharging and charging the capacitor.

公开(公告)号：US10032763B2

公开(公告)日：2018-07-24

申请号：US15171987

申请日：2016-06-02

Applicant: QUALCOMM Incorporated

Inventor： Albert Kumar ,  Hai Dang ,  Sreeker Dundigal ,  Vasisht Vadi

IPC: H03K3/01 ,  H01L27/02 ,  H01L27/06 ,  H01L29/94 ,  H01L29/786 ,  H01L29/10

Abstract: In an aspect of the disclosure, a MOS device for using bulk cross-coupled thin-oxide decoupling capacitor is provided. The MOS device may include a pMOS transistor and an nMOS transistor. The MOS device may include a first set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The first set of transistor body connections may couple a first voltage source to the pMOS transistor body. The first set of transistor body connections may further couple a second voltage source to the nMOS transistor body. The MOS device may include a second set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The second set of transistor body connections may couple the nMOS transistor gate to the pMOS transistor body. The second set of transistor body connections may further couple the pMOS transistor gate to the nMOS transistor body.