FLIP-CHIP MOUNTING STRUCTURE AND FLIP-CHIP MOUNTING METHOD

    公开(公告)号:US20240387444A1

    公开(公告)日:2024-11-21

    申请号:US18786399

    申请日:2024-07-26

    Abstract: A flip-chip mounting structure includes a first member including a first electrode pad, a bump formed on the first electrode pad, a second member including a second electrode pad, and a connection portion formed on the second electrode pad. The first member and the second member are flip-chip mounted, and the first electrode pad and the second electrode pad are electrically connected via the bump and the bonding portion. The bonding portion includes at least a first bonding portion formed in a region sandwiched between a top portion of the bump and the second electrode pad, and a second bonding portion formed in a region surrounding a periphery of the first bonding portion and a region surrounding at least a side surface of the bump. Each of the first bonding portion and the second bonding portion is made of a sintered body of a metal powder.

    SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20210366817A1

    公开(公告)日:2021-11-25

    申请号:US17238286

    申请日:2021-04-23

    Abstract: A semiconductor device includes: a first board that has a first end surface and a second end surface opposite to the first end surface; a second board that is attached to the second end surface of the first board; a plurality of first electrodes that are provided on the first end surface; a second electrode that is provided on the second end surface and electrically coupled to an electrode of the second board; an internal wiring that is provided inside the first board and electrically coupled to the second electrode; a plurality of third electrodes that are provided inside the first board and electrically couple the first electrodes to the internal wiring; and a strain sensor that is provided inside the first board and measures a strain generated in the first board, in which a linear expansion coefficient of each of the third electrodes is larger than a linear expansion coefficient of the first board.

    SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGING APPARATUS

    公开(公告)号:US20210305293A1

    公开(公告)日:2021-09-30

    申请号:US17171917

    申请日:2021-02-09

    Abstract: A semiconductor element includes a plurality of microlenses provided on a main surface to collect light, a plurality of conductive electrodes provided on a back surface of the main surface, a photoelectric converter to which the light collected by the plurality of microlenses is guided, and a strain sensor provided on the same layer as the photoelectric converter to detect a strain. A solid-state imaging apparatus includes the semiconductor element, a transparent member, an adhesive layer that covers the plurality of microlenses and adheres to the transparent member, and a plurality of external connection electrodes electrically connected to the plurality of conductive electrodes, respectively.

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

    公开(公告)号:US20230089483A1

    公开(公告)日:2023-03-23

    申请号:US17821726

    申请日:2022-08-23

    Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor element having an electrode terminal, forming a resist on the semiconductor element, the resist having a first surface facing the electrode terminal and a second surface opposite to the first surface, providing an imprint mold having a third surface and a protrusion protruding from the third surface, forming an opening in the resist by disposing the imprint mold on the second surface of the resist and inserting the protrusion into the resist, the third surface of the imprint mold facing the second surface of the resist, the protrusion being aligned with the electrode terminal, curing the resist by applying energy to the resist, widening the opening in a radial direction of the opening by causing the resist to react with a developer, and forming a bump by filling the opening with metal, in which the forming of the opening in the resist is performed in a state where a gap is provided between the second surface of the resist and the third surface of the imprint mold.

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