公开(公告)号：US20240332234A1

公开(公告)日：2024-10-03

申请号：US18738095

申请日：2024-06-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KEIKO IKUTA ,  KIYOKAZU ITOI ,  DAISUKE SAKURAI

IPC: H01L23/00 ,  B22F7/08 ,  H05K3/40

CPC classification number: H01L24/11 ,  B22F7/08 ,  H05K3/4007 ,  B22F2998/10 ,  H01L2224/11312 ,  H01L2224/1147

Abstract: A method for manufacturing a bump on an object includes preparing an object including an electrode pad and a resist layer including an opening portion on the electrode pad. Further, the method includes inserting a needle having a diameter smaller than an opening diameter of the opening portion to the opening portion to come into contact with the electrode pad, filing the opening portion with a metal particle dispersion by transferring the metal particle dispersion to the needle, and sintering the metal particle dispersion filling the opening portion.

公开(公告)号：US20230089483A1

公开(公告)日：2023-03-23

申请号：US17821726

申请日：2022-08-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KIYOKAZU ITOI ,  KEIKO IKUTA ,  DAISUKE SAKURAI

IPC: H01L23/00

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor element having an electrode terminal, forming a resist on the semiconductor element, the resist having a first surface facing the electrode terminal and a second surface opposite to the first surface, providing an imprint mold having a third surface and a protrusion protruding from the third surface, forming an opening in the resist by disposing the imprint mold on the second surface of the resist and inserting the protrusion into the resist, the third surface of the imprint mold facing the second surface of the resist, the protrusion being aligned with the electrode terminal, curing the resist by applying energy to the resist, widening the opening in a radial direction of the opening by causing the resist to react with a developer, and forming a bump by filling the opening with metal, in which the forming of the opening in the resist is performed in a state where a gap is provided between the second surface of the resist and the third surface of the imprint mold.