公开(公告)号：US20140013029A1

公开(公告)日：2014-01-09

申请号：US13632161

申请日：2012-10-01

Applicant: PHISON ELECTRONICS CORP.

Inventor： Te-Change Tsui ,  Tzung-Lin Wu

IPC: G06F12/00

CPC classification number: G06F11/1666 ,  G06F11/1428

Abstract: A memory storage device and a repairing method thereof are provided. The memory storage device has a rewritable non-volatile memory module having multiple physical units. The physical units include at least one backup physical unit which is configured to be accessed only by a specific command set and stored with at least one customized data. The method includes receiving a specific read command from a host system for reading the backup physical unit and transmitting the customized data therein to the host system when the memory storage device is capable of receiving and processing commands from the host system, the specific read command belongs to the specific command set; and writing the customized data from the host system into a corresponding physical unit to restore the memory storage device to a factory setting when receiving the writing command from the host system for writing the customized data.

Abstract translation: 提供了一种存储器存储装置及其修复方法。 存储器存储设备具有具有多个物理单元的可重写非易失性存储器模块。 物理单元包括至少一个备份物理单元，其被配置为仅由特定命令集访问并且与至少一个定制数据一起存储。 该方法包括当存储器存储设备能够接收和处理来自主机系统的命令时，从主机系统接收用于读取备份物理单元的特定读取命令并将其中的定制数据发送到主机系统，该特定读取命令属于 到具体的命令集; 以及当从主机系统接收到用于写入定制数据的写入命令时，将定制数据从主机系统写入相应的物理单元以将存储器存储设备恢复到出厂设置。

公开(公告)号：US20150006983A1

公开(公告)日：2015-01-01

申请号：US14018436

申请日：2013-09-05

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  Siu-Tung Lam ,  Tzung-Lin Wu ,  Kuo-Yi Cheng

IPC: G11C29/50 ,  G11C16/26

CPC classification number: G11C29/50004 ,  G11C16/00 ,  G11C16/26 ,  G11C16/3459 ,  G11C29/021 ,  G11C29/028

Abstract: A read voltage setting method for a rewritable non-volatile memory module is provided. The method includes: reading test data stored in memory cells of a word line to obtain a corresponding critical voltage distribution and identifying a default read voltage corresponding to the word line based on the corresponding critical voltage distribution; applying a plurality of test read voltages obtained according to the default read voltage to the word line to read a plurality of test page data; and determining an optimized read voltage corresponding to the word line according to the minimum error bit number among a plurality of error bit numbers of the test page data. The method further includes calculating a difference value between the default read voltage and the optimized read voltage as a read voltage adjustment value corresponding to the word line and recording the read voltage adjustment value in a retry table.

Abstract translation: 提供了一种用于可重写非易失性存储器模块的读取电压设置方法。 该方法包括：读取存储在字线的存储单元中的测试数据，以获得相应的临界电压分布，并基于相应的临界电压分布识别与字线对应的默认读取电压; 将根据所述默认读取电压获得的多个测试读取电压施加到所述字线以读取多个测试页面数据; 以及根据所述测试页数据的多个错误位数中的最小误差位数确定与所述字线对应的优化读取电压。 该方法还包括计算默认读取电压和优化读取电压之间的差值作为对应于字线的读取电压调整值，并将读取电压调整值记录在重试表中。

公开(公告)号：US09257204B2

公开(公告)日：2016-02-09

申请号：US14018436

申请日：2013-09-05

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  Siu-Tung Lam ,  Tzung-Lin Wu ,  Kuo-Yi Cheng

IPC: G11C29/00 ,  G11C29/50 ,  G11C16/26 ,  G11C29/02 ,  G11C16/34 ,  G11C16/00

CPC classification number: G11C29/50004 ,  G11C16/00 ,  G11C16/26 ,  G11C16/3459 ,  G11C29/021 ,  G11C29/028

Abstract: A read voltage setting method for a rewritable non-volatile memory module is provided. The method includes: reading test data stored in memory cells of a word line to obtain a corresponding critical voltage distribution and identifying a default read voltage corresponding to the word line based on the corresponding critical voltage distribution; applying a plurality of test read voltages obtained according to the default read voltage to the word line to read a plurality of test page data; and determining an optimized read voltage corresponding to the word line according to the minimum error bit number among a plurality of error bit numbers of the test page data. The method further includes calculating a difference value between the default read voltage and the optimized read voltage as a read voltage adjustment value corresponding to the word line and recording the read voltage adjustment value in a retry table.

Abstract translation: 提供了一种用于可重写非易失性存储器模块的读取电压设置方法。 该方法包括：读取存储在字线的存储单元中的测试数据，以获得相应的临界电压分布，并基于相应的临界电压分布识别与字线对应的默认读取电压; 将根据所述默认读取电压获得的多个测试读取电压施加到所述字线以读取多个测试页面数据; 以及根据所述测试页数据的多个错误位数中的最小误差位数确定与所述字线对应的优化读取电压。 该方法还包括计算默认读取电压和优化读取电压之间的差值作为对应于字线的读取电压调整值，并将读取电压调整值记录在重试表中。

公开(公告)号：US08966161B2

公开(公告)日：2015-02-24

申请号：US13632161

申请日：2012-10-01

Applicant: Phison Electronics Corp.

Inventor： Te-Change Tsui ,  Tzung-Lin Wu

IPC: G06F12/16

CPC classification number: G06F11/1666 ,  G06F11/1428

Abstract: A memory storage device and a repairing method thereof are provided. The memory storage device has a rewritable non-volatile memory module having multiple physical units. The physical units include at least one backup physical unit which is configured to be accessed only by a specific command set and stored with at least one customized data. The method includes receiving a specific read command from a host system for reading the backup physical unit and transmitting the customized data therein to the host system when the memory storage device is capable of receiving and processing commands from the host system, the specific read command belongs to the specific command set; and writing the customized data from the host system into a corresponding physical unit to restore the memory storage device to a factory setting when receiving the writing command from the host system for writing the customized data.

Abstract translation: 提供了一种存储器存储装置及其修复方法。 存储器存储设备具有具有多个物理单元的可重写非易失性存储器模块。 物理单元包括至少一个备份物理单元，其被配置为仅由特定命令集访问并且与至少一个定制数据一起存储。 该方法包括当存储器存储设备能够接收和处理来自主机系统的命令时，从主机系统接收用于读取备份物理单元并将其中的定制数据发送到主机系统的特定读命令，该特定读命令属于 到具体的命令集; 以及当从主机系统接收到用于写入定制数据的写入命令时，将定制数据从主机系统写入相应的物理单元以将存储器存储设备恢复到出厂设置。