公开(公告)号：US10546640B2

公开(公告)日：2020-01-28

申请号：US15591116

申请日：2017-05-10

Applicant: PHISON ELECTRONICS CORP.

Inventor： Tsung-Lin Wu ,  Te-Chang Tsui ,  Chien-Fu Lee

IPC: G06F11/10 ,  G11C16/16 ,  G11C16/08 ,  G11C16/26 ,  G11C16/04 ,  G11C7/10 ,  G11C16/22

Abstract: A data protecting method and a memory storage device are provided. The data protecting method includes reading a first string from the rewritable non-volatile memory module to obtain a data string; performing a decoding operation based on the data string to obtain block information corresponding to a plurality of physical erasing units; inputting the block information to an error checking and correcting (ECC) circuit of the memory storage device to generate a second string; and storing the second string into the rewritable non-volatile memory module.

公开(公告)号：US20180276067A1

公开(公告)日：2018-09-27

申请号：US15591116

申请日：2017-05-10

Applicant: PHISON ELECTRONICS CORP.

Inventor： Tsung-Lin Wu ,  Te-Chang Tsui ,  Chien-Fu Lee

IPC: G06F11/10 ,  G11C16/16 ,  G11C16/08 ,  G11C16/26 ,  G11C16/04

CPC classification number: G11C16/08 ,  G06F11/1068 ,  G11C7/1006 ,  G11C16/0483 ,  G11C16/22

Abstract: A data protecting method and a memory storage device are provided. The data protecting method includes reading a first string from the rewritable non-volatile memory module to obtain a data string; performing a decoding operation based on the data string to obtain block information corresponding to a plurality of physical erasing units; inputting the block information to an error checking and correcting (ECC) circuit of the memory storage device to generate a second string; and storing the second string into the rewritable non-volatile memory module.