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Patent Agency Ranking
公开(公告)号：US20210185286A1
公开(公告)日：2021-06-17
申请号：US16711237
申请日：2019-12-11
Applicant: OmniVision Technologies, Inc.
Inventor： Chin Poh Pang , Guansong Liu , Xiaodong Yang , Boyang Zhang , Hongjun Li , Da Meng
Abstract: An image sensor includes a plurality of photodiodes, a plurality of color filters, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array, each of the plurality of photodiodes disposed within respective portions of a semiconductor material with a first lateral area. The plurality of color filters are arranged as a color filter array optically aligned with the photodiode array. Each of the plurality of color filters having a second lateral area greater than the first lateral area. The plurality of microlenses are arranged as a microlens array optically aligned with the color filter array and the photodiode array. Each of the plurality of microlenses have a third later area greater than the first lateral area and less than the second lateral area.
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公开(公告)号：US20130033629A1
公开(公告)日：2013-02-07
申请号：US13650056
申请日：2012-10-11
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Wei Zheng , Hsin-Chih Tai , Yin Qian , Hongjun Li , Howard E. Rhodes
CPC classification number: H04N5/361 , H01L27/1461 , H01L27/14634 , H01L27/1464 , H04N5/3745
Abstract: An imaging system capable of black level calibration includes an imaging pixel array, at least one black reference pixel, and peripheral circuitry. The imaging pixel array includes a plurality of active pixels each coupled to capture image data. The black reference pixel is coupled to generate a black reference signal for calibrating the image data. Light transmitting layers are disposed on a first side of a pixel array die including the imaging system and cover at least the imaging pixel array and the black reference pixel. A light shielding layer is disposed on the first side of the pixel array die and covers a portion of the light transmitting layers and the black reference pixel without covering the imaging pixel array.
Abstract translation: 能够进行黑电平校准的成像系统包括成像像素阵列，至少一个黑色参考像素和外围电路。 成像像素阵列包括多个有源像素，每个有源像素被耦合以捕获图像数据。 黑参考像素被耦合以产生用于校准图像数据的黑参考信号。 光透射层设置在包括成像系统的像素阵列管芯的第一侧，并且至少覆盖成像像素阵列和黑色参考像素。 遮光层设置在像素阵列管芯的第一侧上，并且覆盖透光层和黑色参考像素的一部分而不覆盖成像像素阵列。
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公开(公告)号：US11252381B2
公开(公告)日：2022-02-15
申请号：US16711237
申请日：2019-12-11
Applicant: OmniVision Technologies, Inc.
Inventor： Chin Poh Pang , Guansong Liu , Xiaodong Yang , Boyang Zhang , Hongjun Li , Da Meng
Abstract: An image sensor includes a plurality of photodiodes, a plurality of color filters, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array, each of the plurality of photodiodes disposed within respective portions of a semiconductor material with a first lateral area. The plurality of color filters are arranged as a color filter array optically aligned with the photodiode array. Each of the plurality of color filters having a second lateral area greater than the first lateral area. The plurality of microlenses are arranged as a microlens array optically aligned with the color filter array and the photodiode array. Each of the plurality of microlenses have a third later area greater than the first lateral area and less than the second lateral area.
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公开(公告)号：US20230395628A1
公开(公告)日：2023-12-07
申请号：US17832399
申请日：2022-06-03
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Chin Poh Pang , Wei Deng , Chen-Wei Lu , Da Meng , Guansong Liu , Yin Qian , Xiaodong Yang , Hongjun Li , Zhiqiang Lin , Chao Niu
IPC: H01L27/146
CPC classification number: H01L27/14627 , H01L27/14645
Abstract: Half Quad Photodiode (QPD) for improving QPD channel imbalance. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor material. Each pixel includes a plurality of subpixels. Each subpixel comprises a plurality of first photodiodes, a plurality of second photodiodes and a plurality of third photodiodes. The plurality of pixels are configured to receive incoming light through an illuminated surface of the semiconductor material. A plurality of small microlenses are individually distributed over individual first photodiodes and individual second photodiodes of each subpixel. A plurality of large microlenses are each distributed over a plurality of third photodiodes of each subpixel. A diameter of the small microlenses is smaller than a diameter of the large microlenses.
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公开(公告)号：US20230395626A1
公开(公告)日：2023-12-07
申请号：US17832335
申请日：2022-06-03
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Xiaodong Yang , Guansong Liu , Wei Deng , Chin Poh Pang , Da Meng , Hongjun Li
IPC: H01L27/146 , H04N5/232 , H04N5/369
CPC classification number: H01L27/14627 , H01L27/14645 , H04N5/232122 , H04N5/36961
Abstract: Image sensors for Phase-Detection Auto Focus (PDAF) are provided. An image sensor includes a pixel including a plurality of photodiodes disposed in a semiconductor material according to an arrangement. The arrangement defines a first image subpixel comprising a plurality of first photodiodes, a second image subpixel comprising a plurality of second photodiodes, and a third image subpixel including a plurality of third photodiodes, and a phase detection subpixel comprising a first photodiode, a second photodiode, or a third photodiodes. The pixel can include a plurality of first micro-lenses disposed individually overlying at least a subset of the plurality of photodiodes of the first, second and third image subpixels. The pixel can also include a second micro-lens disposed overlying the phase detection subpixel, a first micro-lens of the first micro-lenses having a first radius less than a second radius of the second micro-lens.
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