公开(公告)号：US20240303390A1

公开(公告)日：2024-09-12

申请号：US18547768

申请日：2022-02-22

Applicant: mi2-factory GmbH

Inventor： Florian Krippendorf ,  Constantin Csato

IPC: G06F30/20 ,  H01J37/05 ,  H01J37/317

CPC classification number: G06F30/20 ,  H01J37/05 ,  H01J37/3171

Abstract: A computer-implemented method for the simulation of an energy-filtered ion implantation (EFII), including: Determining at least one part of an energy filter; determining a simulation area in a substrate; Defining an ion tunnel for receiving ions directed from an ion beam source; implementing the determined at least one part of the energy filter, the ion beam source, the determined simulation area in the substrate, and the defined ion tunnel in a simulation environment; determining a minimum distance between the implemented at least one part of the energy filter and the implemented substrate for enabling a desired degree of lateral homogenization of the energy distribution in a doping depth profile of the implemented substrate; and defining a total simulation volume.

公开(公告)号：US12125670B2

公开(公告)日：2024-10-22

申请号：US17610811

申请日：2020-05-14

Applicant: MI2-FACTORY GMBH

Inventor： Constantin Csato ,  Florian Krippendorf

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/08 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01L21/26513 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/057

Abstract: A device for implanting particles in a substrate comprises a particle source and a particle accelerator for generating an ion beam of positively charged ions. The device also comprises a substrate holder and an energy filter, which is arranged between the particle accelerator and the substrate holder. The energy filter is a microstructured membrane with a predefined structural profile for setting a dopant depth profile and/or a defect depth profile produced in the substrate by the implantation. The device also comprises at least one passive braking element for the ion beam. The at least one passive braking element is arranged between the particle accelerator and the substrate holder and is spaced apart from the energy filter.

公开(公告)号：US11705300B2

公开(公告)日：2023-07-18

申请号：US17338933

申请日：2021-06-04

Applicant: mi2-factory GmbH

Inventor： Florian Krippendorf ,  Constantin Csato

IPC: H01J37/317 ,  H01J37/05 ,  C23C14/18 ,  C23C14/48 ,  H01J37/147 ,  H01J37/20 ,  H01L21/04 ,  H01L29/32

CPC classification number: H01J37/05 ,  C23C14/18 ,  C23C14/48 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/317 ,  H01J37/3171 ,  H01L21/046 ,  H01L29/32 ,  H01J2237/024 ,  H01J2237/057 ,  H01J2237/1518 ,  H01J2237/20214

Abstract: A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

公开(公告)号：US12266499B2

公开(公告)日：2025-04-01

申请号：US17631186

申请日：2020-07-30

Applicant: MI2-FACTORY GMBH

Inventor： Constantin Csato ,  Florian Krippendorf

IPC: H01J37/05 ,  G21K1/10

Abstract: The energy filter for use in the implantation of ions into a substrate is micropatterned for establishing, in the substrate, a dopant depth profile and/or defect depth profile brought about by the implantation, and has two or more layers or layer sections which are arranged one after another in the height direction of the energy filter. The energy filter also has a plurality of cavities each of which arranged between at least two layers or layer sections, with interior walls bounding the cavities and joining the at least two layers or layer sections to one another.

公开(公告)号：US11183358B2

公开(公告)日：2021-11-23

申请号：US17036966

申请日：2020-09-29

Applicant: mi2-factory GmbH

Inventor： Florian Krippendorf ,  Constantin Csato

IPC: H01J37/05 ,  H01J37/317 ,  G21K1/10 ,  G21K1/04 ,  H01J37/147

Abstract: The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate.

公开(公告)号：US12080510B2

公开(公告)日：2024-09-03

申请号：US18378421

申请日：2023-10-10

Applicant: mi2-factory GmbH

Inventor： Florian Krippendorf ,  Constantin Csato

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/317 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/002 ,  H01J2237/047 ,  H01J2237/057 ,  H01J2237/31705 ,  H01J2237/3171

Abstract: A method of monitoring compliance with filter specification during the implantation of ions into a substrate reading a signature of the filter and comparing the read signature with filter signatures stored in a database to identify properties of the filter including at least one of a maximum allowable temperature of the filter and a maximum allowable accumulated ion dose of the filter. The temperature and/or the accumulated ion dose of the filter is measured while ions are implanted into the substrate by an ion beam passing through the filter. The implantation is terminated when the measured temperature or accumulated ion dose of the filter reaches or exceeds the maximum allowable threshold.

公开(公告)号：US20240038491A1

公开(公告)日：2024-02-01

申请号：US18266511

申请日：2021-12-07

Applicant: mi2-factory GmbH

Inventor： Constantin Csato ,  Florian Krippendorf

IPC: H01J37/317 ,  H01J37/30 ,  C23C14/48

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  C23C14/48

Abstract: An ion implantation device (20) is provided comprising an energy filter (25) with at least one filter layer (32) and at least one support element (30) for supporting the energy filter (25), wherein the at least one support element (30) overlaps at least part of the energy filter (25).

公开(公告)号：US11929229B2

公开(公告)日：2024-03-12

申请号：US18196548

申请日：2023-05-12

Applicant: mi2-factory GmbH

Inventor： Florian Krippendorf ,  Constantin Csato

IPC: H01J37/317 ,  C23C14/18 ,  C23C14/48 ,  H01J37/05 ,  H01J37/147 ,  H01J37/20 ,  H01L21/04 ,  H01L29/32

CPC classification number: H01J37/05 ,  C23C14/18 ,  C23C14/48 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/317 ,  H01J37/3171 ,  H01L21/046 ,  H01L29/32 ,  H01J2237/024 ,  H01J2237/057 ,  H01J2237/1518 ,  H01J2237/20214

Abstract: A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.

公开(公告)号：US20240047168A1

公开(公告)日：2024-02-08

申请号：US18266733

申请日：2021-12-07

Applicant: mi2-factory GmbH

Inventor： Constantin Csato ,  Florian Krippendorf ,  André Zowalla

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/147

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J37/1474 ,  H01J2237/057

Abstract: An energy filter assembly (1, 100, 200, 300) for ion implantation system is provided comprising an energy filter (25), a first filter frame (40), and at least one coupling element (50). The energy filter (25) has at least one filter element (25a) absorbing the beam energy of an ion beam (10). The at least one coupling element (50) elastically connects the first filter frame (40) with the energy filter (25).

公开(公告)号：US11837430B2

公开(公告)日：2023-12-05

申请号：US17491963

申请日：2021-10-01

Applicant: mi2-factory GmbH

Inventor： Florian Krippendorf ,  Constantin Csato

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/147

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/317 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/002 ,  H01J2237/047 ,  H01J2237/057 ,  H01J2237/3171 ,  H01J2237/31705

Abstract: A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.