公开(公告)号：US20160320807A1

公开(公告)日：2016-11-03

申请号：US15204712

申请日：2016-07-07

Applicant: LG ELECTRONICS INC.

Inventor： Seungjin LEE ,  Keetae KIM ,  Dongguk KANG ,  Hojung LEE

IPC: G06F1/16

CPC classification number: G06F1/1666 ,  G06F1/1698 ,  G06F3/0221

Abstract: A portable keyboard is disclosed, by which portability can be enhanced with a simple configuration. The present invention includes a plurality of key assemblies, a body part and a flexible connecting member. When the portable keyboard is carried, a plurality of the key assemblies are rolled up around an outer circumference of the body part in a manner that the flexible connecting member between a plurality of the key assemblies is folded. When the portable keyboard is used, a plurality of the key assemblies are unfolded by being rolled down centering on the body part in a manner that the flexible connecting member between a plurality of the key assemblies is unfolded.

公开(公告)号：US20230060069A1

公开(公告)日：2023-02-23

申请号：US17797224

申请日：2020-02-06

Applicant: LG ELECTRONICS INC.

Inventor： Hojung LEE ,  Seung Yup JANG ,  Jaemoo KIM

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/10 ,  H01L21/04 ,  H01L29/66

Abstract: The present disclosure relates to: a MOSFET device which is applicable to a semiconductor device and, particularly, is manufactured using silicon carbide; and a manufacturing method therefor. The present disclosure provides a metal-oxide-semiconductor field effect transistor device which may comprise: a drain electrode; a substrate disposed on the drain electrode; an N-type drift layer disposed on the substrate; a plurality of P-type well layer regions disposed on the drift layer and spaced apart from each other to define a channel; an N+ region disposed on the well layer regions and adjacent to the channel; a P+ region disposed at the other side of the channel; a gate oxide layer disposed on the drift layer; a gate layer disposed on the gate oxide layer; and a source electrode disposed on the gate layer.

公开(公告)号：US20240014255A1

公开(公告)日：2024-01-11

申请号：US17758339

申请日：2020-01-03

Applicant: LG ELECTRONICS INC.

Inventor： Seung Yup JANG ,  Jaemoo KIM ,  Hojung LEE

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0607 ,  H01L29/1608 ,  H01L29/7811 ,  H01L29/66712

Abstract: The present disclosure relates to: a MOSFET device that is applicable to a semiconductor device and, particularly, is manufactured from silicon carbide; and a manufacturing method therefor. The present disclosure relates to a metal-oxide-semiconductor field-effect transistor device capable of comprising: a drain electrode; a substrate located on the drain electrode; an N-type drift layer located on the substrate; a first current spreading layer which is located on the drift layer and which has a first doping concentration; P-type wells located on the first current spreading layer, and spaced from each other so as to define a channel; a second current spreading layer which is located between the wells and which has a second doping concentration that is higher than the first doping concentration; a gate oxide layer located on the second current spreading layer and the wells; and a source electrode located on the gate oxide layer.

公开(公告)号：US20220406889A1

公开(公告)日：2022-12-22

申请号：US17758907

申请日：2020-01-16

Applicant: LG ELECTRONICS INC.

Inventor： Hojung LEE ,  Seung Yup JANG ,  Jaemoo KIM

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78

Abstract: The present disclosure can be applied to semiconductor devices and, in particular, relates to a MOSFET device made of silicon carbide and a method for manufacturing same. A metal-oxide film semiconductor field-effect transistor device of the present disclosure may comprise: a drain electrode; a substrate arranged on the drain electrode; an N-type drift layer arranged on the substrate; a current-spreading layer arranged on the drift layer; P-type well layers arranged on the current-spreading layer to define a channel; an N+ region arranged on the well layers; a damage prevention layer adjacent to the N+ region and having a lower N-type doping concentration than that of the N+ region; a P+ region arranged on one side of the channel; a gate oxide layer arranged on the current-spreading layer; a gate layer arranged on the gate oxide layer; and a source electrode arranged on the gate layer.