The present disclosure relates to: a MOSFET device that is applicable to a semiconductor device and, particularly, is manufactured from silicon carbide; and a manufacturing method therefor. The present disclosure relates to a metal-oxide-semiconductor field-effect transistor device capable of comprising: a drain electrode; a substrate located on the drain electrode; an N-type drift layer located on the substrate; a first current spreading layer which is located on the drift layer and which has a first doping concentration; P-type wells located on the first current spreading layer, and spaced from each other so as to define a channel; a second current spreading layer which is located between the wells and which has a second doping concentration that is higher than the first doping concentration; a gate oxide layer located on the second current spreading layer and the wells; and a source electrode located on the gate oxide layer.