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公开(公告)号：US12007293B2
公开(公告)日：2024-06-11
申请号：US17452748
申请日：2021-10-28
Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
Inventor： Won Hyo Kim , Woo Kyeong Seong , Kook Nyung Lee , Su Mi Yoon , Dong Ki Hong , Young Joo Kim , Hye Lim Kang
Abstract: Disclosed are a pressure sensor using conductive thread, the pressure sensor including a plurality of first conductive lines arranged parallel to each other in a first direction in a state of being spaced apart from each other, a plurality of second conductive lines arranged parallel to each other in a second direction intersecting the first direction in a state of being spaced apart from each other, and a spacer located between the plurality of first conductive lines and the plurality of second conductive lines, resistance of the spacer being changed when pressure is applied thereto, whereby it is possible to measure a wide range of pressure with elasticity and flexibility, and a method of manufacturing the same.
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公开(公告)号：US11921080B2
公开(公告)日：2024-03-05
申请号：US17139517
申请日：2020-12-31
Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
Inventor： Kook Nyung Lee , Woo Kyeong Seong , Won Hyo Kim , Dong Ki Hong , Hye Lim Kang
IPC: G01N27/414
CPC classification number: G01N27/4141
Abstract: The gas sensor according to an exemplary embodiment of the present invention comprises: an FET device including one or more gate electrodes; a sensor array part including a plurality of sensors, in which a first electrode of each sensor is connected to at least one gate electrode of the plurality of gate electrodes in the FET device; and a controller detecting a gas using a current between a drain-source in response to voltage changes in the gate electrode of the FET device, wherein each sensor includes: a first electrode connected to a gate electrode of the FET device; a second electrode receiving an operating voltage through a switch controlled by the controller; and a detection film interposed between the first electrode and the second electrode.
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公开(公告)号：US12276555B2
公开(公告)日：2025-04-15
申请号：US17859314
申请日：2022-07-07
Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
Inventor： Won Hyo Kim , Woo Kyeong Seong , Kook Nyung Lee , Su Mi Yoon , Dong Ki Hong , Young Joo Kim , Hye Lim Kang
Abstract: A conductive yarn pressure sensor is proposed. The pressure sensor may include a porous fiber layer having predetermined cavities formed therein. The pressure sensor may also include a first sensing electrode made of a first conductive yarn formed on one surface of the porous fiber layer, and a second sensing electrode made of a second conductive yarn formed on the other surface of the porous fiber layer. The first sensing electrode or the second sensing electrode may be provided so as to be in contact with each other in the cavities of the porous fiber layer due to external pressure. According to an embodiment, by having conductive yarn in flexible clothing or textile material, pressure can be sensed by effectively responding to deformation due to external pressure.
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4.发明授权公开(公告)号：US09960299B2
公开(公告)日：2018-05-01
申请号：US15212084
申请日：2016-07-15
Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
Inventor： Suk Won Jung , Yeon Shik Choi , Young Chang Jo , Jae Gi Son , Ki Man Jeon , Woo Kyeong Seong , Kook Nyung Lee , Min Ho Lee , Hyuck Ki Hong
IPC: H01L31/0352 , H01L27/02 , H01L27/144 , H01L31/0224 , H01L31/028 , H01L31/107 , H01L31/18
CPC classification number: H01L31/035227 , H01L27/0248 , H01L27/1443 , H01L31/022408 , H01L31/028 , H01L31/107 , H01L31/1804 , H01L31/1864
Abstract: Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.
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Patent Agency Ranking
5.发明申请公开(公告)号：US20170186895A1
公开(公告)日：2017-06-29
申请号：US15212084
申请日：2016-07-15
Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
Inventor： Suk Won Jung , Yeon Shik Choi , Young Chang Jo , Jae Gi Son , Ki Man Jeon , Woo Kyeong Seong , Kook Nyung Lee , Min Ho Lee , Hyuck Ki Hong
IPC: H01L31/0352 , H01L31/028 , H01L31/0224 , H01L27/144 , H01L31/18 , H01L31/107 , H01L27/02
CPC classification number: H01L31/035227 , H01L27/0248 , H01L27/1443 , H01L31/022408 , H01L31/028 , H01L31/107 , H01L31/1804 , H01L31/1864
Abstract: Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.
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公开(公告)号：US12152948B2
公开(公告)日：2024-11-26
申请号：US17684156
申请日：2022-03-01
Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
Inventor： Won Hyo Kim , Woo Kyeong Seong , Kook Nyung Lee , Su Mi Yoon , Dong Ki Hong , Young Joo Kim , Hye Lim Kang
Abstract: A sensor includes a base material and a through-hole formed to pass through the upper surface and the lower surface of the base material. The sensor may also include a conductive thread sensor including conductive thread that passes through the through-hole. The pressure sensor is implemented through a structural combination of the conductive thread and the base material so that the degree of design freedom can be effectively increased in the application of a variety of recent wearable flexible materials.
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公开(公告)号：US12140558B2
公开(公告)日：2024-11-12
申请号：US17139576
申请日：2020-12-31
Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
Inventor： Kook Nyung Lee , Woo Kyeong Seong , Won Hyo Kim
IPC: G01N27/414 , G01N33/543
Abstract: A bio sensor using a FET element and an extended gate, and an operating method thereof are disclosed. A biosensor using a field effect transistor (FET) device and an extended gate electrode according to the present invention is characterized by comprising: an extended gate electrode connected to the FET element; a sensing electrode made of the same material as the extended gate electrode and on which a receptor antibody selectively recognizing a target molecule is fixed; and a reference electrode that maintains a constant potential and is selectively connected to the sensing electrode.
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公开(公告)号：US10063800B2
公开(公告)日：2018-08-28
申请号：US15212076
申请日：2016-07-15
Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
Inventor： Suk Won Jung , Yeon Shik Choi , Young Chang Jo , Jae Gi Son , Ki Man Jeon , Woo Kyeong Seong , Kook Nyung Lee , Min Ho Lee , Hyuck Ki Hong
IPC: H04N5/374 , H01L31/0352 , H01L31/0224 , H01L29/49 , H01L27/146
CPC classification number: H04N5/374 , H01L27/14607 , H01L27/1461 , H01L27/14689 , H01L29/4916 , H01L31/022408 , H01L31/035227
Abstract: Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.
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公开(公告)号：US20170187974A1
公开(公告)日：2017-06-29
申请号：US15212076
申请日：2016-07-15
Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
Inventor： Suk Won Jung , Yeon Shik Choi , Young Chang Jo , Jae Gi Son , Ki Man Jeon , Woo Kyeong Seong , Kook Nyung Lee , Min Ho Lee , Hyuck Ki Hong
IPC: H04N5/374 , H01L31/0224 , H01L29/49 , H01L31/0352 , H01L27/146
CPC classification number: H04N5/374 , H01L27/14607 , H01L27/1461 , H01L27/14689 , H01L29/4916 , H01L31/022408 , H01L31/035227
Abstract: Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.
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