公开(公告)号：US10741746B2

公开(公告)日：2020-08-11

申请号：US16163934

申请日：2018-10-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Suk Won Jung ,  Nam Kyu Cho

IPC: H01L41/08 ,  H01L41/39 ,  H01L29/84 ,  H01L41/113 ,  H01L29/06 ,  H01L41/18 ,  G01L9/00

Abstract: Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.

公开(公告)号：US10063800B2

公开(公告)日：2018-08-28

申请号：US15212076

申请日：2016-07-15

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Suk Won Jung ,  Yeon Shik Choi ,  Young Chang Jo ,  Jae Gi Son ,  Ki Man Jeon ,  Woo Kyeong Seong ,  Kook Nyung Lee ,  Min Ho Lee ,  Hyuck Ki Hong

IPC: H04N5/374 ,  H01L31/0352 ,  H01L31/0224 ,  H01L29/49 ,  H01L27/146

CPC classification number: H04N5/374 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14689 ,  H01L29/4916 ,  H01L31/022408 ,  H01L31/035227

Abstract: Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.

公开(公告)号：US20170187974A1

公开(公告)日：2017-06-29

申请号：US15212076

申请日：2016-07-15

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Suk Won Jung ,  Yeon Shik Choi ,  Young Chang Jo ,  Jae Gi Son ,  Ki Man Jeon ,  Woo Kyeong Seong ,  Kook Nyung Lee ,  Min Ho Lee ,  Hyuck Ki Hong

IPC: H04N5/374 ,  H01L31/0224 ,  H01L29/49 ,  H01L31/0352 ,  H01L27/146

CPC classification number: H04N5/374 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14689 ,  H01L29/4916 ,  H01L31/022408 ,  H01L31/035227

Abstract: Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.

公开(公告)号：US09960299B2

公开(公告)日：2018-05-01

申请号：US15212084

申请日：2016-07-15

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Suk Won Jung ,  Yeon Shik Choi ,  Young Chang Jo ,  Jae Gi Son ,  Ki Man Jeon ,  Woo Kyeong Seong ,  Kook Nyung Lee ,  Min Ho Lee ,  Hyuck Ki Hong

IPC: H01L31/0352 ,  H01L27/02 ,  H01L27/144 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/107 ,  H01L31/18

CPC classification number: H01L31/035227 ,  H01L27/0248 ,  H01L27/1443 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804 ,  H01L31/1864

Abstract: Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.

公开(公告)号：US20170186895A1

公开(公告)日：2017-06-29

申请号：US15212084

申请日：2016-07-15

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Suk Won Jung ,  Yeon Shik Choi ,  Young Chang Jo ,  Jae Gi Son ,  Ki Man Jeon ,  Woo Kyeong Seong ,  Kook Nyung Lee ,  Min Ho Lee ,  Hyuck Ki Hong

IPC: H01L31/0352 ,  H01L31/028 ,  H01L31/0224 ,  H01L27/144 ,  H01L31/18 ,  H01L31/107 ,  H01L27/02

CPC classification number: H01L31/035227 ,  H01L27/0248 ,  H01L27/1443 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804 ,  H01L31/1864

Abstract: Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.

公开(公告)号：US10786175B2

公开(公告)日：2020-09-29

申请号：US15409405

申请日：2017-01-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Suk Won Jung ,  Young Chang Jo ,  Woo Kyeong Seong ,  Yun Jae Won ,  Hyuck Ki Hong

IPC: A61B5/053 ,  A61B5/00 ,  A61B5/05

Abstract: Disclosed is a sensor for measuring skin conductivity and a method of manufacturing the same, wherein the sensor includes: a base board made of a flexible material; an electrode provided on a surface of the base board, and transmitting an electrical signal; and an uneven structure provided on the electrode, and configured to increase an electrical contact area with skin via sweat secreted onto a surface of skin.