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    THICKNESS CHANGE MONITOR WAFER FOR IN SITU FILM THICKNESS MONITORING
    2.
    发明申请
    THICKNESS CHANGE MONITOR WAFER FOR IN SITU FILM THICKNESS MONITORING 有权
    厚度变化监测器用于薄膜厚度监测

    公开(公告)号：US20140253928A1

    公开(公告)日：2014-09-11

    申请号：US14195390

    申请日：2014-03-03

    Applicant: KLA-Tencor Corporation

    Inventor： Earl Jensen ,  Kevin O'Brien

    IPC: G01B11/06 ,  H01J37/32

    CPC classification number: H01J37/32935 ,  G01B11/0625 ,  G01B11/0675 ,  G01B11/0683 ,  H01J37/32972

    Abstract: An etch rate monitor apparatus has a substrate, an optical element and one or more optical detectors mounted to a common substrate with the one or more detectors sandwiched between the substrate and optical element to detect changes in optical interference signal resulting from changes in optical thickness of the optical element. The optical element is made of a material that allows transmission of light of a wavelength of interest. A reference waveform and data waveform can be collected with the apparatus and cross-correlated to determine a thickness change. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    Abstract translation: 蚀刻速率监测装置具有衬底，光学元件和安装到公共衬底的一个或多个光学检测器，其中一个或多个检测器夹在衬底和光学元件之间，以检测由光学厚度的变化引起的光学干涉信号的变化 光学元件。 光学元件由允许感兴趣的波长的光的透射的材料制成。 可以使用设备收集参考波形和数据波形，并进行交叉相关，以确定厚度变化。 提供该摘要以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    Method and System for Measuring Radiation and Temperature Exposure of Wafers Along a Fabrication Process Line
    4.
    发明申请
    Method and System for Measuring Radiation and Temperature Exposure of Wafers Along a Fabrication Process Line 有权
    用于测量沿着制造工艺线的晶片的辐射和温度暴露的方法和系统

    公开(公告)号：US20160138969A1

    公开(公告)日：2016-05-19

    申请号：US14880899

    申请日：2015-10-12

    Applicant: KLA-Tencor Corporation

    Inventor： Mei Sun ,  Earl Jensen ,  Kevin O'Brien

    IPC: G01J1/42 ,  G01J1/58 ,  G01J5/10

    CPC classification number: G01J1/429 ,  G01J1/0204 ,  G01J1/0271 ,  G01J1/0407 ,  G01J1/58 ,  G01J5/04 ,  G01J5/0818 ,  G01J5/10 ,  G01K11/20 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/10

    Abstract: A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.

    Abstract translation: 用于测量辐射强度和温度的测量晶片装置包括包括一个或多个空腔的晶片组件。 测量晶片装置还包括检测器组件。 检测器组件设置在晶片组件的一个或多个空腔内。 检测器组件包括一个或多个光传感器。 检测器组件还被配置为对入射在晶片组件的表面上的紫外线的强度进行直接或间接的测量。 检测器组件还被配置为基于一个或多个光传感器的一个或多个特性来确定晶片组件的一个或多个部分的温度。

    Thickness change monitor wafer for in situ film thickness monitoring
    7.
    发明授权
    Thickness change monitor wafer for in situ film thickness monitoring 有权
    厚度变化监测晶圆用于原位膜厚监测

    公开(公告)号：US09305753B2

    公开(公告)日：2016-04-05

    申请号：US14195390

    申请日：2014-03-03

    Applicant: KLA-Tencor Corporation

    Inventor： Earl Jensen ,  Kevin O'Brien

    IPC: G01B11/02 ,  H01J37/32 ,  G01B11/06

    CPC classification number: H01J37/32935 ,  G01B11/0625 ,  G01B11/0675 ,  G01B11/0683 ,  H01J37/32972

    Abstract: An etch rate monitor apparatus has a substrate, an optical element and one or more optical detectors mounted to a common substrate with the one or more detectors sandwiched between the substrate and optical element to detect changes in optical interference signal resulting from changes in optical thickness of the optical element. The optical element is made of a material that allows transmission of light of a wavelength of interest. A reference waveform and data waveform can be collected with the apparatus and cross-correlated to determine a thickness change. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    Abstract translation: 蚀刻速率监测装置具有衬底，光学元件和安装到公共衬底的一个或多个光学检测器，其中一个或多个检测器夹在衬底和光学元件之间，以检测由光学厚度的变化引起的光学干涉信号的变化 光学元件。 光学元件由允许感兴趣的波长的光的透射的材料制成。 可以使用设备收集参考波形和数据波形，并进行交叉相关，以确定厚度变化。 提供该摘要以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    POSITION SENSITIVE SUBSTRATE DEVICE
    8.
    发明申请
    POSITION SENSITIVE SUBSTRATE DEVICE 有权
    位置敏感基板装置

    公开(公告)号：US20150176980A1

    公开(公告)日：2015-06-25

    申请号：US14536428

    申请日：2014-11-07

    Applicant: KLA- Tencor Corporation

    Inventor： Earl Jensen ,  Kevin O'Brien

    IPC: G01B11/14

    CPC classification number: H01L21/68 ,  H01L21/681

    Abstract: Some aspects of the present disclosure relate to a system having a substrate device, a substrate support surface, and a substrate handler that positions the substrate device on the substrate support surface. The substrate device and the substrate support surface may have counterpart coarse position units and fine position units. The system may measure coarse positional offsets between the first and second coarse position units, re-position the substrate device on the substrate support surface based on the coarse positional offsets, and subsequently measure fine positional offsets between the first and second fine position units. In some implementations, the substrate device is integrally coupled to the substrate handler via a wireless communication link in order to communicate position information as feedback for further placement.

    Abstract translation: 本公开的一些方面涉及具有衬底装置，衬底支撑表面和将衬底装置定位在衬底支撑表面上的衬底处理器的系统。 基板装置和基板支撑面可以具有对应的粗略位置单元和精细位置单元。 该系统可以测量第一和第二粗略位置单元之间的粗略的位置偏移，基于粗略的位置偏移将基板装置重新定位在基板支撑表面上，随后测量第一和第二精细位置单元之间的精细位置偏移。 在一些实施方案中，衬底装置经由无线通信链路一体地耦合到衬底处理器，以便将位置信息作为反馈传达以进一步放置。

    Sample Transport Device With Integrated Metrology
    10.
    发明申请
    Sample Transport Device With Integrated Metrology 审中-公开

    公开(公告)号：US20190295874A1

    公开(公告)日：2019-09-26

    申请号：US16280145

    申请日：2019-02-20

    Applicant: KLA-Tencor Corporation

    Inventor： Giampietro Bieli ,  Robert Tas ,  Kevin O'Brien ,  Shankar Krishnan ,  Joshua Butler

    IPC: H01L21/67 ,  G01J3/447 ,  G01N21/21 ,  G01N21/88 ,  G01N21/55 ,  G01B11/06 ,  H01L21/677

    Abstract: A metrology system may include one or more casings that fit within an interior cavity of a sample transport device, an illumination source within one of the one or more casings, one or more illumination optics within one of the one or more casings for directing illumination from the illumination source to a sample located in the interior cavity of the sample transport device, one or more collection optics within one of the one or more casings for light from the sample in response to the illumination from the illumination source, and one or more detectors within one of the one or more casings for generating metrology data based on at least a portion of the light collected by the one or more collection optics.

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