Methods And Systems For Scatterometry Based Metrology Of Structures Fabricated On Transparent Substrates

    公开(公告)号:US20240201073A1

    公开(公告)日:2024-06-20

    申请号:US18231688

    申请日:2023-08-08

    CPC classification number: G01N21/211 G01N21/956 G01N21/958 G01N2021/213

    Abstract: Methods and systems for performing spectroscopic ellipsometry (SE) measurements of surface structures of optical elements fabricated on transparent substrates are presented herein. The SE measurement system is configured to detect light from the measured structures without contamination from light reflected from the backside surface of the transparent substrate. Surface structures of optical elements include film structures and grating structures fabricated on thin transparent substrates. The SE based measurement system is configured with a relatively large illumination Numerical Aperture (NA) and relatively high demagnification from the illumination source to the measurement spot on the optically transparent substrate. This configuration results in a relatively small measurement spot size and small depth of focus that minimizes the amount of light reflected from the backside of the optically transparent substrate. In addition, a relatively small collection aperture size further minimizes backside reflected light from reaching the detector.

    Measurements Of Semiconductor Structures Based On Spectral Differences At Different Process Steps

    公开(公告)号:US20240186191A1

    公开(公告)日:2024-06-06

    申请号:US18210571

    申请日:2023-06-15

    CPC classification number: H01L22/12 G01J3/0229 G01J3/2823

    Abstract: Methods and systems for measuring values of one or more parameters of interest, including changes in values of one or more parameters of interest, based on measured spectral differences are presented herein. A trained spectral difference based measurement model determines changes in the values of one or more parameters of interest based on a measure of differences in spectra measured before and after one or more process steps. In some examples, a measure of spectral difference is determined based on a difference in measured intensity, a difference in harmonic signal values, or a difference in value of one or more Mueller Matrix elements. A measure of spectral difference may be expressed as a set of difference values, a scalar value, or coefficients of a functional fit to difference values. A measure of spectral difference may be determined based on a weighting of spectral differences according to wavelength.

    INTERFACE-BASED THIN FILM METROLOGY USING SECOND HARMONIC GENERATION

    公开(公告)号:US20240176206A1

    公开(公告)日:2024-05-30

    申请号:US18116187

    申请日:2023-03-01

    CPC classification number: G02F1/3532 G01N21/636 G01N21/9501 G01N2021/0125

    Abstract: A metrology system may include an illumination source to generate an illumination beam and an illumination sub-system to direct the illumination beam to a sample with an inversion-symmetric substrate and one or more films disposed on the inversion-symmetric substrate. The system may further include a filter configured to block a wavelength of the illumination beam and pass a wavelength associated with a second harmonic of the illumination beam and a detector to capture second harmonic generation (SHG) light. The system may further include a controller to receive metrology data from the detector associated with the SHG light from with an interface between the inversion-symmetric substrate and the one or more films and generate one or more metrology measurements associated with the one or more films based on the metrology data.

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