公开(公告)号：US20120247674A1

公开(公告)日：2012-10-04

申请号：US13493655

申请日：2012-06-11

Applicant: James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

Inventor： James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

IPC: C23F1/08

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32633 ,  H01J37/32651 ,  H01J2237/335

Abstract: Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.

Abstract translation: 提供了用于灰化工件的等离子体发生器装置的实施例。 该装置包括适于在其中从其入口端到其出口端的连续气体流动的容器。 容器由电介质材料制成并且适于其中流过其中的至少一种气体成分的一部分进行电离。 气流分配器构造成将气流引导到容器内的区域，并且线圈围绕容器的与气流分配器引导气体流动的区域相邻的容器侧壁的至少一部分。 射频发生器耦合到线圈。

公开(公告)号：US06464779B1

公开(公告)日：2002-10-15

申请号：US09766143

申请日：2001-01-19

Applicant: Ronald A. Powell ,  James A. Fair

Inventor： Ronald A. Powell ,  James A. Fair

IPC: C30B2902

CPC classification number: C23C16/45525 ,  C23C16/18 ,  C23C16/56 ,  C30B25/02 ,  C30B29/02

Abstract: This invention pertains to systems and methods for atomic layer chemical vapor deposition. More specifically, the invention pertains to methods for copper atomic layer chemical vapor deposition, particularly to deposit a seed layer prior to the electrochemical Cu fill operation in integrated circuit fabrication. It also pertains to apparatus modules for performing such deposition.

Abstract translation: 本发明涉及原子层化学气相沉积的系统和方法。 更具体地，本发明涉及铜原子层化学气相沉积的方法，特别是在集成电路制造中的电化学Cu填充操作之前沉积种子层。 它也涉及用于进行这种沉积的装置模块。

公开(公告)号：US4920908A

公开(公告)日：1990-05-01

申请号：US323199

申请日：1989-03-13

Applicant: Daniel L. Brors ,  James A. Fair ,  Kenneth A. Monnig

Inventor： Daniel L. Brors ,  James A. Fair ,  Kenneth A. Monnig

IPC: C23C16/42 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/4412 ,  C23C16/42 ,  C23C16/4588

Abstract: An apparatus is provided for obtaining very high quality films by chemical vapor deposition in situations where the deposition is mass transport limited. In accordance with the preferred embodiments, there is provided a vacuum housing which is actively cooled to a temperature below which deposition occurs, while at the same time the wafers are being heated to cause deposition at the wafer surfaces. Also provided are mixing chamber systems to ensure that reactant gases are well mixed and distributed evenly over each wafer surface. Mass transport control is further enhanced by providing an exhaust manifold which scavenges reactant gases from locations distributed throughout the system to achieve an even exhaust. Also provided is a method for depositing silicon-rich tungsten silicides using the above apparatus.

Abstract translation: 提供了一种用于通过化学气相沉积获得非常高质量的膜的装置，其中沉积是质量传输受限的。 根据优选实施例，提供了一种真空壳体，其被主动冷却到低于该温度发生的温度，同时晶片被加热以在晶片表面上沉积。 还提供了混合室系统，以确保反应气体在每个晶片表面上均匀地均匀分布。 通过提供排气歧管进一步增强了质量传输控制，排气歧管从分布在整个系统中的位置清除反应气体，以实现均匀的排气。 还提供了使用上述装置沉积富硅的硅化钨的方法。

公开(公告)号：US07691749B2

公开(公告)日：2010-04-06

申请号：US11305368

申请日：2005-12-16

Applicant: Karl B. Levy ,  Junghwan Sung ,  Kaihan A. Ashtiani ,  James A. Fair ,  Joshua Collins ,  Juwen Gao

Inventor： Karl B. Levy ,  Junghwan Sung ,  Kaihan A. Ashtiani ,  James A. Fair ,  Joshua Collins ,  Juwen Gao

IPC: H01L21/44

CPC classification number: C23C16/4554 ,  C23C16/0272 ,  C23C16/34 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76843

Abstract: Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.

Abstract translation: 描述了用于沉积氮化钨层的方法。 该方法使用精心控制的沉积技术如脉冲成核层（PNL）形成氮化钨层。 最初，在衬底表面上形成钨层。 然后将钨层暴露于氮化剂以形成氮化钨层。 形成相对较厚层的方法涉及与还原剂钨前体和氮化剂接触的重复循环。 在一些情况下，该循环还可以包括与诸如膦或胂的掺杂剂前体接触。

公开(公告)号：US07014709B1

公开(公告)日：2006-03-21

申请号：US10838443

申请日：2004-05-03

Applicant: James A. Fair

Inventor： James A. Fair

IPC: C30B25/16

CPC classification number: C23C16/45525 ,  C23C16/16 ,  C23C16/18 ,  C23C16/45542 ,  C23C16/45553

Abstract: A CVD method deposits conformal metal layers on small features of a substrate surface. The method includes three principal operations: depositing a thin conformal layer of precursor over some or all of the substrate surface; oxidizing the precursor to convert it to a conformal layer of metal oxide; and reducing some or all of the metal oxide to convert it to a conformal layer of the metal itself. The conformal layer of precursor may form a “monolayer” on the substrate surface. Examples of metals for deposition include copper, cobalt, ruthenium, indium, and rhodium.

Abstract translation: CVD法在衬底表面的小特征上沉积保形金属层。 该方法包括三个主要操作：在一些或所有基板表面上沉积薄的前体前体的共形层; 氧化前体以将其转化成金属氧化物的共形层; 并且还原一些或全部金属氧化物以将其转化为金属本身的共形层。 前体的共形层可以在基底表面上形成“单层”。 用于沉积的金属的实例包括铜，钴，钌，铟和铑。

公开(公告)号：US06905543B1

公开(公告)日：2005-06-14

申请号：US10174628

申请日：2002-06-19

Applicant: James A. Fair ,  Nerissa Taylor ,  Junghwan Sung

Inventor： James A. Fair ,  Nerissa Taylor ,  Junghwan Sung

IPC: C23C16/02 ,  C23C16/14 ,  C23C16/455 ,  C30B25/14

CPC classification number: C23C16/14 ,  C23C16/0218 ,  C23C16/45525

Abstract: The nucleation delay in the formation of a tungsten layer on a substrate is reduced or eliminated by alternative processes. In one process the substrate is exposed to atomic hydrogen before the tungsten nucleation layer is formed. In the other process the substrate is exposed to a boron hydride such as diborane (B2H6) before the nucleation layer is formed. The process works effectively to reduce or eliminate the tungsten nucleation delay on a variety of surfaces, including silicon, silicon dioxide, silicon nitride and titanium nitride.

Abstract translation: 通过替代方法减少或消除了在基底上形成钨层的成核延迟。 在一个过程中，在形成钨成核层之前，将衬底暴露于原子氢。 在另一方法中，在形成成核层之前，将基底暴露于硼氢化物如乙硼烷（B 2 H 6 H 6）。 该工艺有效地减少或消除了各种表面上的钨成核延迟，包括硅，二氧化硅，氮化硅和氮化钛。

公开(公告)号：US5741363A

公开(公告)日：1998-04-21

申请号：US621088

申请日：1996-03-22

Applicant: Peter C. Van Buskirk ,  James A. Fair ,  David E. Kotecki

Inventor： Peter C. Van Buskirk ,  James A. Fair ,  David E. Kotecki

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/455

Abstract: A showerhead disperser device for mixing plural vapor streams, comprising: a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume; the front wall having a multiplicity of vapor mixture discharge openings therein, for discharging mixed vapor from the interior volume of the housing exteriorly thereof, flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for distribution thereof in the interior volume of the housing. The baffled showerhead disperser is usefully employed to enable formation of CVD thin films of highly uniform composition and thickness.

Abstract translation: 一种用于混合多个蒸汽流的喷头分散装置，包括：壳体，其包括彼此间隔开的前壁和后壁以及其间的侧壁，在所述壳体内限定内部容积; 所述前壁在其中具有多个蒸汽混合物排出口，用于从其外部的所述壳体的内部容积排出混合蒸气，流动通道连接到所述壳体，以将待混合的各种流体引入到所述壳体的内部容积中; 以及安装在所述壳体的内部容积中的至少一个挡板，位于所述壳体的前壁和后壁之间，所述挡板具有与所述侧壁间隔开的边缘，以在其间形成环形流动通道，并且所述挡板具有 各个流体中的至少一个在引入壳体的内部空间时被引导到其上，以将其分配在壳体的内部空间中。 挡板式喷头分散机有利地用于形成高度均匀组成和厚度的CVD薄膜。

公开(公告)号：US08864935B2

公开(公告)日：2014-10-21

申请号：US13493655

申请日：2012-06-11

Applicant: James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

Inventor： James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32633 ,  H01J37/32651 ,  H01J2237/335

Abstract: Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.

Abstract translation: 提供了用于灰化工件的等离子体发生器装置的实施例。 该装置包括适于在其中从其入口端到其出口端的连续气体流动的容器。 容器由电介质材料制成并且适于其中流过其中的至少一种气体成分的一部分进行电离。 气流分配器构造成将气流引导到容器内的区域，并且线圈围绕容器的与气流分配器引导气体流动的区域相邻的容器侧壁的至少一部分。 射频发生器耦合到线圈。

公开(公告)号：US20080156631A1

公开(公告)日：2008-07-03

申请号：US11616326

申请日：2006-12-27

Applicant: James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

Inventor： James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

IPC: H05H1/00

CPC classification number: H05H1/46 ,  H01J37/32357 ,  H01J37/32458

Abstract: Methods of using a plasma generator to ash a work piece is provided. In an exemplary embodiment, the method includes flowing gas that has a gaseous component able to form plasma under conditions of radio-frequency energy excitation into the container. A proportion of the gas is directed to a first region of the container to form a higher gas density in the first region of the container and a corresponding lower gas density in a second region of the container. Sufficient energy is applied to the gas in at least the first region to excite a proportion of the gaseous component able to form plasma.

Abstract translation: 提供了使用等离子体发生器来灰化工件的方法。 在示例性实施例中，该方法包括使气体具有能够在射频能量激发的条件下形成等离子体的气体成分进入容器。 气体的一部分被引导到容器的第一区域，以在容器的第一区域中形成更高的气体密度，并且在容器的第二区域中形成相应较低的气体密度。 在至少第一区域中对气体施加足够的能量以激发能够形成等离子体的一部分气态组分。

公开(公告)号：US6010748A

公开(公告)日：2000-01-04

申请号：US17384

申请日：1998-02-03

Applicant: Peter C. Van Buskirk ,  James A. Fair ,  David E. Kotecki

Inventor： Peter C. Van Buskirk ,  James A. Fair ,  David E. Kotecki

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/40

CPC classification number: C23C16/45565 ,  C23C16/455

Abstract: A showerhead disperser device for mixing plural vapor streams, comprising: a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume; the front wall having a multiplicity of vapor mixture discharge openings therein, for discharging mixed vapor from the interior volume of the housing exteriorly thereof, flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for distribution thereof in the interior volume of the housing. The baffled showerhead disperser is usefully employed to enable formation of CVD thin films of highly uniform composition and thickness.

Abstract translation: 一种用于混合多个蒸汽流的喷头分散装置，包括：壳体，其包括彼此间隔开的前壁和后壁以及其间的侧壁，在所述壳体内限定内部容积; 所述前壁在其中具有多个蒸汽混合物排出口，用于从其外部的所述壳体的内部容积排出混合蒸气，流动通道连接到所述壳体，以将待混合的各种流体引入到所述壳体的内部容积中; 以及安装在所述壳体的内部容积中的至少一个挡板，位于所述壳体的前壁和后壁之间，所述挡板具有与所述侧壁间隔开的边缘，以在其间形成环形流动通道，并且所述挡板具有 各个流体中的至少一个在引入壳体的内部空间时被引导到其上，以将其分配在壳体的内部空间中。 挡板式喷头分散机有利地用于形成高度均匀组成和厚度的CVD薄膜。