知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

58 条记录 (耗时 0.028 秒)

    Electrolessly formed high resistivity magnetic materials
    1.
    发明授权
    Electrolessly formed high resistivity magnetic materials 有权

    公开(公告)号：US11152144B2

    公开(公告)日：2021-10-19

    申请号：US15486744

    申请日：2017-04-13

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Hariklia Deligianni ,  William J. Gallagher ,  Yu Luo ,  Lubomyr T. Romankiw ,  Joonah Yoon

    IPC分类号： C23C18/50 ,  H01F1/153 ,  H01F41/04 ,  H01F10/30 ,  H01F10/16 ,  H01F41/24

    摘要： Present disclosure relates to magnetic materials, chips having magnetic materials, and methods of forming magnetic materials. In certain embodiments, magnetic materials may include a seed layer, and a cobalt-based alloy formed on seed layer. The seed layer may include copper, cobalt, nickel, platinum, palladium, ruthenium, iron, nickel alloy, cobalt-iron-boron alloy, nickel-iron alloy, and any combination of these materials. In certain embodiments, the chip may include one or more on-chip magnetic structures. Each on-chip magnetic structure may include a seed layer, and a cobalt-based alloy formed on seed layer. In certain embodiments, method may include: placing a seed layer in an aqueous electroless plating bath to form a cobalt-based alloy on seed layer. In certain embodiments, the aqueous electroless plating bath may include sodium tetraborate, an alkali metal tartrate, ammonium sulfate, cobalt sulfate, ferric ammonium sulfate and sodium borohydride and has a pH between about 9 to about 13.

    OHMIC CONTACT OF THIN FILM SOLAR CELL
    7.
    发明申请
    OHMIC CONTACT OF THIN FILM SOLAR CELL 审中-公开
    薄膜太阳能电池的OHMIC接触

    公开(公告)号：US20160380135A1

    公开(公告)日：2016-12-29

    申请号：US15262760

    申请日：2016-09-12

    申请人： International Business Machines Corporation

    发明人： Shafaat Ahmed ,  Hariklia Deligianni ,  Lubomyr T. Romankiw

    IPC分类号： H01L31/0224 ,  H01L31/032

    CPC分类号： H01L31/022441 ,  B82Y30/00 ,  H01L31/022425 ,  H01L31/032 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541

    摘要： A chalcogen-resistant material including at least one of a conductive elongated nanostructure layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide material layer is deposited over the chalcogen-resistant material. The conductive elongated nanostructures, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by blocking chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.

    摘要翻译： 包含导电细长纳米结构层和高功函数材料层中的至少一种的耐硫元素材料沉积在基底上的过渡金属层上。 半导体硫族化物材料层沉积在抗硫属材料上。 导电细长纳米结构（如果存在）可以通过提供从过渡金属层通过硫属元素抗性材料和半导体硫族化物材料的直接导电路径来降低接触电阻。 如果存在高功函数材料层，通过阻止过渡金属层中的过渡金属的硫族化，可以降低接触电阻。 降低接触电阻可以提高包括硫族化物半导体材料的太阳能电池的效率。