公开(公告)号：US09953787B2

公开(公告)日：2018-04-24

申请号：US15060630

申请日：2016-03-04

Applicant: Innovative Micro Technology

Inventor： Christopher S. Gudeman ,  Paul J. Rubel ,  Marin Sigurdson

IPC: H01H59/00 ,  B81B7/00 ,  B81C1/00 ,  H01H49/00 ,  H01H1/00

CPC classification number: H01H59/0009 ,  B81B7/00 ,  B81B2201/012 ,  B81C1/00341 ,  H01H49/00 ,  H01H2001/0084

Abstract: Systems and methods for forming an electrostatic MEMS switch include forming a movable cantilevered beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate. The cantilevered beam may be formed by etching the perimeter shape in the device layer of an SOI substrate. An additional void may be formed in the movable beam such that it bends about an additional hinge line as a result of the additional void. This may give the beam and switch advantageous kinematic characteristics.

公开(公告)号：US10011478B2

公开(公告)日：2018-07-03

申请号：US15634230

申请日：2017-06-27

Applicant: Innovative Micro Technology

Inventor： Christopher S. Gudeman ,  Paul J. Rubel

IPC: H01L23/48 ,  B81B7/00 ,  B81C1/00 ,  B23K20/02 ,  B32B9/04

CPC classification number: B81B7/0058 ,  B23K20/023 ,  B32B9/041 ,  B32B2457/00 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/037

Abstract: A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.