公开(公告)号：US20140225231A1

公开(公告)日：2014-08-14

申请号：US13764852

申请日：2013-02-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino ,  John C. Hall ,  Kenneth F. McAvey, JR. ,  Charles F. Musante ,  Anthony K. Stamper

IPC: H01L23/00 ,  H01L21/02

CPC classification number: H01L23/562 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Apparatus and methods modulate the bowing of thin wafers. According to a method, a wafer is formed of semiconductor material. The wafer has a front side and a back side. A cross-section of the wafer is reduced by thinning material from the front side of the wafer. A plurality of circuits comprising individual semiconductor devices are formed on the front side of the wafer. A stress-balancing layer is formed on the back side of the wafer. The stress-balancing layer comprises at least one of a polymer film and/or a metal film having at least one metal layer. A heat treatment is applied to the wafer. The heat treatment may be an annealing process to a temperature between 150° C. and 450° C., which develops an in-situ bilateral tensile stress in the stress-balancing layer that modulates the bowing of thin wafers.

Abstract translation: 装置和方法调节薄晶片的弯曲。 根据一种方法，晶片由半导体材料形成。 晶片具有前侧和后侧。 通过从晶片的前侧减薄材料来减小晶片的横截面。 包括单个半导体器件的多个电路形成在晶片的前侧。 应力平衡层形成在晶片的背面。 应力平衡层包括具有至少一个金属层的聚合物膜和/或金属膜中的至少一种。 对晶片进行热处理。 热处理可以是在150℃和450℃之间的温度的退火过程，其在应力平衡层中产生原位双边拉伸应力，其调节薄晶片的弯曲。

公开(公告)号：US20150044619A1

公开(公告)日：2015-02-12

申请号：US13961208

申请日：2013-08-07

Applicant: International Business Machines Corporation

Inventor： John C. Hall ,  Jeffrey C. Maling ,  Charles F. Musante

IPC: H01L21/673 ,  B65D21/02

CPC classification number: H01L21/67346

Abstract: A substrate carrier, including: a baffle having a continuous perimeter sidewall surrounding an enclosed region; and one or more standoffs attached to an inside surface of the perimeter sidewall, the one or more standoffs extending into the enclosed region and below a bottom edge of the perimeter sidewall, the one or more standoffs each having a lip located between an upper edge of the baffle and the lower edge of the baffle. Also, a method of annealing substrates using the substrate carrier.

Abstract translation: 一种衬底载体，包括：挡板，其具有围绕封闭区域的连续周边侧壁; 以及附接到周边侧壁的内表面的一个或多个支座，所述一个或多个支座延伸到所述封闭区域中并在所述周边侧壁的底部边缘下方，所述一个或多个支座各自具有位于所述周边侧壁的上边缘之间的唇缘 挡板和挡板的下边缘。 另外，使用衬底载体退火衬底的方法。

公开(公告)号：US08912091B2

公开(公告)日：2014-12-16

申请号：US13738541

申请日：2013-01-10

Applicant: International Business Machines Corporation

Inventor： Jay S. Burnham ,  Damyon L. Corbin ,  George A. Dunbar, III ,  Jeffrey P. Gambino ,  John C. Hall ,  Kenneth F. McAvey, Jr. ,  Charles F. Musante ,  Anthony K. Stamper

IPC: H01L21/4763 ,  H01L29/40 ,  H01L23/498 ,  H01L21/768 ,  G06F17/50

CPC classification number: H01L23/49827 ,  G06F17/50 ,  H01L23/481 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/03

Abstract: A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.

Abstract translation: 本文公开了具有改善的金属附着力的背面金属接地层和制造方法。 该方法包括在衬底中形成至少一个穿硅通孔（TSV）。 该方法还包括在衬底的背面形成氧化物层。 所述方法还包括在所述氧化物层上形成金属化的接地平面并与所述至少一个TSV的暴露部分电接触。