公开(公告)号：US11387350B2

公开(公告)日：2022-07-12

申请号：US16719852

申请日：2019-12-18

申请人： IMEC vzw

发明人： Geert Eneman ,  Bartlomiej Pawlak ,  Liesbeth Witters ,  Geoffrey Pourtois

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/161 ,  H01L29/78

摘要： According to one aspect, a method of fabricating a semiconductor structure includes cutting a semiconductor fin extending along a substrate. Cutting the semiconductor fin can comprise forming a fin cut mask. The fin cut mask can define a number of masked regions and a number of cut regions. The method can include cutting the fin into a number of fin parts by etching the fin in the cut regions. The method can further comprise forming an epitaxial semiconductor capping layer on the fin prior to forming the fin cut mask or on the fin parts subsequent to cutting the fin. A capping layer material and a fin material can be lattice mismatched. According to another aspect, a corresponding semiconductor structure comprises fin parts.

公开(公告)号：US09698262B2

公开(公告)日：2017-07-04

申请号：US15072130

申请日：2016-03-16

申请人： IMEC VZW ,  GLOBALFOUNDRIES INC.

发明人： Bartlomiej Pawlak ,  Geert Eneman

IPC分类号： H01L29/74 ,  H01L29/80 ,  H01L29/94 ,  H01L21/00 ,  H01L21/338 ,  H01L21/337 ,  H01L29/78 ,  H01L21/765 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423

CPC分类号： H01L29/7827 ,  H01L21/76 ,  H01L21/765 ,  H01L29/0607 ,  H01L29/0657 ,  H01L29/1083 ,  H01L29/42356

摘要： A vertical FinFET semiconductor device and a method of forming the same are disclosed. In one aspect, the semiconductor device includes a current-blocking structure formed over a semiconductor structure and a semiconductor fin formed on the current-blocking structure. The current blocking structure includes a first layer of a first conductive type, a layer of a second conductive type over the first layer, and a second layer of the first conductive type over the layer of the second conductive type. The semiconductor fin has a doped bottom portion contacting the current-blocking structure, a doped top portion formed vertically opposite to the doped bottom portion and a channel portion vertically interposed between the doped bottom portion and the doped top portion.