公开(公告)号：US20230343835A1

公开(公告)日：2023-10-26

申请号：US18334541

申请日：2023-06-14

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhili ZHANG ,  Jin RAO ,  Tao LIU ,  Haijun LI ,  Wei LU ,  Shuiming LI ,  Cen TANG ,  Qiang HE ,  Juncai MA ,  Chunhua FAN ,  Yangyi ZHU

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/401 ,  H01L29/66462

Abstract: The technology of this application relates to a high electron mobility transistor including a GaN substrate layer, a barrier layer, a circuit layer, and a field plate that are sequentially stacked. The GaN substrate layer includes a main body layer and a channel layer that are stacked, the channel layer is adjacent to the barrier layer, the circuit layer includes a source, a drain, and a dielectric layer, the dielectric layer is disposed between the source and the drain, the field plate is disposed on a side that is of the dielectric layer and that is away from the barrier layer, an orthographic projection of the field plate on the channel layer is a field plate projection, the channel layer includes a modulation region and a non-modulation region, the non-modulation region surrounds the modulation region, the modulation region and the field plate projection at least partially overlap.