公开(公告)号：US20230171522A1

公开(公告)日：2023-06-01

申请号：US17922806

申请日：2021-03-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Masaru NAKANO ,  Jun HIRAMITSU ,  Akihiro SHIMADA ,  Hiroaki ISHII ,  Toshinori ITO ,  Yuma TANAKA

IPC: H04N25/771 ,  H01L27/146

CPC classification number: H04N25/771 ,  H01L27/14643

Abstract: A light detection device includes a controller that controls electric potentials of a charge collection electrode and a transfer gate electrode so that potential energy in a region immediately below the charge collection electrode is a first level, and potential energy in a region immediately below the transfer gate electrode is higher than the potential energy in the region immediately below the charge collection electrode in a first period, and so that the potential energy in the region immediately below the charge collection electrode is a second level higher than the first level, and the potential energy in the region immediately below the transfer gate electrode is lower than the potential energy in the region immediately below the charge collection electrode in a second period after the first period.

公开(公告)号：US20230022384A1

公开(公告)日：2023-01-26

申请号：US17787981

申请日：2020-11-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Jun HIRAMITSU ,  Hiroaki ISHII ,  Yuma TANAKA ,  Toshinori ITO

IPC: H01L27/146

Abstract: A multiplying image sensor includes a semiconductor layer having a first surface and a second surface and a wiring layer provided on the second surface. The semiconductor layer includes a plurality of pixels arranged along the first surface. Each of the plurality of pixels includes a first semiconductor region, a second semiconductor region formed on the second surface side with respect to at least a part of the first semiconductor region and divided for each of the plurality of pixels, and a well region formed in the second semiconductor region so as to be separated from the first semiconductor region and forming a part of a pixel circuit. At least a part of the first semiconductor region and at least a part of the second semiconductor region form an avalanche multiplication region.

公开(公告)号：US20170234983A1

公开(公告)日：2017-08-17

申请号：US15502031

申请日：2015-08-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Jun HIRAMITSU ,  Akihiro SHIMADA

IPC: G01S17/10 ,  H01L27/148 ,  H04N5/374 ,  H01L31/113 ,  G01S17/89 ,  H04N5/376

Abstract: A ranging method uses a light source and a range sensor. The range sensor includes a charge-generating area and first and second charge-accumulating areas. Charges generated in the charge-generating area are transferred to the first charge-accumulating area during a first period so as to be accumulated in the first charge-accumulating area and the second charge-accumulating area during a second period so as to be accumulated in the second charge-accumulating area. A distance d to an object OJ is arithmetized based on a quantity of charges accumulated in the first charge-accumulating area and a quantity of charges accumulated in the second charge-accumulating area. When pulse light is emitted from the light source, the pulse light whose light-intensity stable period within the emission period of the pulse light is set in advance to be longer than each of the first and second periods is emitted from the light source.

公开(公告)号：US20130221472A1

公开(公告)日：2013-08-29

申请号：US13644605

申请日：2012-10-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Takashi Suzuki ,  Jun Hiramitsu

IPC: H01L31/0224

CPC classification number: G01C3/08 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14641

Abstract: A signal charge collecting region is disposed inside a charge generating region so as to be surrounded by the charge generating region, and collects signal charges from the charge generating region. An unnecessary charge collecting region is disposed outside the charge generating region so as to surround the charge generating region, and collects unnecessary charges from the charge generating region. A transfer electrode is disposed between the signal charge collecting region and the charge generating region, and causes the signal charges from the charge generating region to flow into the signal charge collecting region in response to an input signal. An unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region, and causes the unnecessary charges from the charge generating region to flow into the unnecessary charge collecting region in response to an input signal.

Abstract translation: 信号电荷收集区域设置在电荷产生区域内，以被电荷产生区域包围，并从电荷产生区域收集信号电荷。 不必要的电荷收集区域设置在电荷产生区域外部，以便围绕电荷产生区域，并从电荷产生区域收集不必要的电荷。 转移电极设置在信号电荷收集区域和电荷产生区域之间，并且响应于输入信号使来自电荷产生区域的信号电荷流入信号电荷收集区域。 不必要的电荷收集栅电极设置在不需要的电荷收集区域和电荷产生区域之间，并且响应于输入信号使来自电荷产生区域的不必要的电荷流入不需要的电荷收集区域。

公开(公告)号：US20240429916A1

公开(公告)日：2024-12-26

申请号：US18580736

申请日：2022-05-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akihiro SHIMADA ,  Mitsuhito MASE

IPC: H03K17/687 ,  H03H11/04

Abstract: A signal processing circuit includes: a filter circuit that removes noise from a target signal; and a controller that controls the filter circuit. The filter circuit includes: a CMOS switch including a first MOSFET and a second MOSFET having different channel types and connected in parallel; and a capacitor electrically connected between an output of the CMOS switch and a ground potential. The controller switches a state of the CMOS switch between a first state in which the first MOSFET is in an ON state and a second state in which the first MOSFET is in an OFF state and the second MOSFET is in an ON state. An ON resistance value of the second MOSFET is higher than an ON resistance value of the first MOSFET.

公开(公告)号：US20230223418A1

公开(公告)日：2023-07-13

申请号：US17922803

申请日：2021-01-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Jun HIRAMITSU ,  Mitsuhito MASE ,  Akihiro SHIMADA ,  Hiroaki ISHII ,  Toshinori ITO ,  Yuma TANAKA

IPC: H01L27/146 ,  H01L31/107

CPC classification number: H01L27/1463 ,  H01L31/107

Abstract: An optical sensor includes an avalanche multiplication region including a first multiplication region having a first conductive type and a second multiplication region having a second conductive type, each of the first multiplication region and the second multiplication region being formed in a layer shape, a charge collection region having the second conductive type disposed on a first side of the second multiplication region, and a first conductive region having the first conductive type disposed on the first side of the second multiplication region. The second multiplication region has a first portion overlapping the charge collection region in a thickness direction of the first multiplication region and the second multiplication region and a second portion overlapping the first conductive region in the thickness direction. A concentration of impurities in the first portion is higher than a concentration of impurities in the second portion.

公开(公告)号：US20210318417A1

公开(公告)日：2021-10-14

申请号：US16846823

申请日：2020-04-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Keiki TAGUCHI ,  Hajime ISHIHARA ,  Hiroo YAMAMOTO ,  Akihiro SHIMADA

IPC: G01S7/4863 ,  G01S17/10

Abstract: A light detection device includes a first photodiode, a second photodiode connected in series to the first photodiode, a first light source configured to output first pulsed light to which the first photodiode is sensitive, and a signal output unit configured to output a current as a detection signal, the current that flow through the second photodiode.

公开(公告)号：US20210132199A1

公开(公告)日：2021-05-06

申请号：US16322664

申请日：2017-05-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Jun HIRAMITSU ,  Akihiro SHIMADA

IPC: G01S7/4863 ,  H01L27/146

Abstract: A range sensor includes a silicon substrate and a transfer electrode. The silicon substrate includes a first principal surface and a second principal surface opposing each other. The silicon substrate is provided with a charge generation region configured to generate a charge in response to incident light and a charge collection region configured to collect charges from the charge generation region, on the first principal surface side. The transfer electrode is disposed between the charge generation region and the charge collection region on the first principal surface. A region of the second principal surface corresponding at least to the charge generation region is formed with a plurality of protrusions. The plurality of protrusions includes a slope inclined with respect to a thickness direction of the silicon substrate. A (111) plane of the silicon substrate is exposed as the slope at the protrusion. A height of the protrusion is 200 nm or more.

公开(公告)号：US20180106902A1

公开(公告)日：2018-04-19

申请号：US15567645

申请日：2016-04-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Jun HIRAMITSU ,  Akihiro SHIMADA

IPC: G01S17/10 ,  G01S7/486

CPC classification number: G01S17/10 ,  G01S7/486 ,  G01S7/4861 ,  G01S7/4865

Abstract: The processing unit causes a light source unit to emit modulated light in one or more emission periods in a plurality of charge transfer cycles within a frame period from connection of an accumulating region to a reset potential to next connection of the accumulating region to the reset potential by controlling a reset switch, and increases the number of emission periods per charge transfer cycle within one frame period. The processing unit obtains, from a sensor unit, a plurality of read values corresponding to a charge amount accumulated in the accumulating region at an alternate point with the plurality of charge transfer cycles, in each of a plurality of read cycles corresponding to each of the plurality of charge transfer cycles. The processing unit calculates the distance based on the plurality of obtained read values.

公开(公告)号：US20170031025A1

公开(公告)日：2017-02-02

申请号：US15302178

申请日：2015-04-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Jun HIRAMITSU ,  Akihiro SHIMADA

IPC: G01S17/89 ,  G01S7/491 ,  G01S17/36

CPC classification number: G01S17/89 ,  G01S7/4914 ,  G01S7/4915 ,  G01S17/36 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/3745

Abstract: In a range image sensor, a plurality of range sensors are disposed in a one-dimensional direction. The plurality of range sensors include a photogate electrode, first and second signal charge accumulating regions disposed on one side of the photogate electrode, third and fourth signal charge accumulating regions disposed on the other side, first transfer electrodes for making charge flow into the first and fourth signal charge accumulating regions in response to a first transfer signal, and second transfer electrodes for making charge flow into the second and third signal charge accumulating regions in response to a second transfer signal.

Abstract translation: 在范围图像传感器中，多个范围传感器沿一维方向设置。 多个量程传感器包括光栅电极，设置在光栅电极的一侧的第一和第二信号电荷累积区，设置在另一侧的第三和第四信号电荷累积区，用于使电荷流入第一和第二信号电荷的第一传输电极， 响应于第一传送信号的第四信号电荷累积区域，以及响应于第二传送信号使电荷流入第二和第三信号电荷累积区域的第二传输电极。