公开(公告)号：US08790935B1

公开(公告)日：2014-07-29

申请号：US13801419

申请日：2013-03-13

申请人： Everspin Technologies, Inc.

发明人： Kerry Nagel ,  Sarin Deshpande ,  Moazzern Hossain ,  Sanjeev Aggarwal

IPC分类号： H01L21/00 ,  G11C11/00

CPC分类号： H01L43/12 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/544 ,  H01L27/222 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for forming a first via with an electrically conductive material, for example, copper, that is formed over and coupled to a conductive landing pad of an MRAM array. A sputter step is performed to lower the surface of the first via below that of a surrounding dielectric material. This recess is repeated in subsequent processing steps, providing alignment marks for the formation of a magnetic tunnel junction. The magnetic tunnel junction may be offset from the first via, and a second via being formed above the magnetic tunnel junction and to a conductive layer.