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公开(公告)号：US11385539B2
公开(公告)日：2022-07-12
申请号：US16747818
申请日：2020-01-21
Applicant: Carl Zeiss SMS Ltd.
Inventor： Joachim Welte
Abstract: Method for compensating at least one defect of a mask blank, wherein the method includes the following steps: (a) obtaining data in respect of a position of the at least one defect of the mask blank; (b) obtaining design data for pattern elements which should be produced on the mask blank; (c) determining whether the at least one defect is arranged relative to a pattern element to be produced in such a way that it has substantially no effect when exposing a wafer using the mask blank that is provided with the pattern element to be produced; and (d) otherwise, displacing the at least one defect on the mask blank in such a way that it has substantially no effect when exposing the wafer using the mask blank that is provided with the pattern element to be produced.
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2.发明授权公开(公告)号：US11366382B2
公开(公告)日：2022-06-21
申请号：US16798696
申请日：2020-02-24
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Vladimir Dmitriev , Joachim Welte , Bernd Geh , Paul Graeupner , Anja Schauer
Abstract: The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.
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3.发明申请公开(公告)号：US20190107783A1
公开(公告)日：2019-04-11
申请号：US16152784
申请日：2018-10-05
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Thomas Thaler , Joachim Welte , Kujan Gorhad , Vladimir Dmitriev , Ute Buttgereit , Thomas Scheruebl , Yuval Perets
IPC: G03F7/20
Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.
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4.发明申请公开(公告)号：US20210263406A1
公开(公告)日：2021-08-26
申请号：US16798696
申请日：2020-02-24
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Vladimir Dmitriev , Joachim Welte , Bernd Geh , Paul Graeupner , Anja Schauer
Abstract: The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.
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公开(公告)号：US11249294B2
公开(公告)日：2022-02-15
申请号：US16269771
申请日：2019-02-07
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Markus Seesselberg , Vladimir Dmitriev , Joachim Welte , Uri Stern , Tomer Cohen , Erez Graitzer
Abstract: An optical system includes a scanning unit, a first lens-element group including at least a first lens element, and a focusing unit which is designed to focus beams onto a focus, wherein the focusing unit includes a second lens-element group including at least a second lens element and an imaging lens. The imaging lens further includes a pupil plane and a wavefront manipulator. The wavefront manipulator is arranged in the pupil plane of the imaging lens or in a plane that is conjugate to the pupil plane, or the scanning unit of the optical system is arranged in a plane that is conjugate to the pupil plane and the wavefront manipulator is arranged upstream of the scanning unit in the light direction. The focus of the second lens-element group lies in the pupil plane of the imaging lens in all focal positions of the focusing unit.
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Patent Agency Ranking
公开(公告)号：US11914289B2
公开(公告)日：2024-02-27
申请号：US17140340
申请日：2021-01-04
Applicant: Carl Zeiss SMS Ltd.
Inventor： Joachim Welte , Uri Stern , Kujan Gorhad , Vladimir Dmitriev
CPC classification number: G03F1/84 , G01N2201/06113 , G01N2201/062 , G03F1/80
Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.
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公开(公告)号：US11366383B2
公开(公告)日：2022-06-21
申请号：US16589515
申请日：2019-10-01
Applicant: Carl Zeiss SMS Ltd.
Inventor： Vladimir Dmitriev , Kujan Gorhad , Joachim Welte , Tanya Serzhanyuk
Abstract: The present invention refers to a method and an apparatus for determining positions of a plurality of pixels to be introduced into a substrate of a photolithographic mask by use of a laser system, wherein the pixels serve to at least partly correct one or more errors of the photolithographic mask. The method comprises the steps: (a) obtaining error data associated with the one or more errors; (b) obtaining first parameters of an illumination system, the first parameters determining an illumination of the photolithographic mask of the illumination system when processing a wafer by illuminating with the illumination system using the photolithographic mask; and (c) determining the positions of the plurality of pixels based on the error data and the first parameters.
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公开(公告)号：US20210124259A1
公开(公告)日：2021-04-29
申请号：US17140340
申请日：2021-01-04
Applicant: Carl Zeiss SMS Ltd.
Inventor： Joachim Welte , Uri Stern , Kujan Gorhad , Vladimir Dmitriev
Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.
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公开(公告)号：US20200159111A1
公开(公告)日：2020-05-21
申请号：US16747818
申请日：2020-01-21
Applicant: Carl Zeiss SMS Ltd.
Inventor： Joachim Welte
Abstract: Method for compensating at least one defect of a mask blank, wherein the method includes the following steps: (a) obtaining data in respect of a position of the at least one defect of the mask blank; (b) obtaining design data for pattern elements which should be produced on the mask blank; (c) determining whether the at least one defect is arranged relative to a pattern element to be produced in such a way that it has substantially no effect when exposing a wafer using the mask blank that is provided with the pattern element to be produced; and (d) otherwise, displacing the at least one defect on the mask blank in such a way that it has substantially no effect when exposing the wafer using the mask blank that is provided with the pattern element to be produced.
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10.发明授权公开(公告)号：US10578975B2
公开(公告)日：2020-03-03
申请号：US16152784
申请日：2018-10-05
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Thomas Thaler , Joachim Welte , Kujan Gorhad , Vladimir Dmitriev , Ute Buttgereit , Thomas Scheruebl , Yuval Perets
IPC: G03F7/20
Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.
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