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    DUAL-LEVEL PULSE TUNING
    1.
    发明申请
    DUAL-LEVEL PULSE TUNING 审中-公开

    公开(公告)号：US20200381214A1

    公开(公告)日：2020-12-03

    申请号：US16429883

    申请日：2019-06-03

    Applicant: Applied Materials, Inc.

    Inventor： Gary LERAY ,  Valentin N. TODOROW ,  James ROGERS

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/3213

    Abstract: Embodiments for the present application include methods and apparatus for operating a plasma enhanced substrate processing system using dual level pulsed radio frequency (RF) power. More specifically, embodiments of the present disclosure allow for frequency and power tuning in a process chamber using dual level pulsed power by using a tuning controller coupled to a matching network and/or a RF power generator. In one embodiment, a tuning system includes a tuning controller disposed in a tuning system, the tuning controller configured to tune dual level RF pulsing data from a RF power generator, wherein the tuning system is connectable to a plasma processing chamber, and a memory connecting to the tuning controller, wherein the tuning controller is configured to couple to a RF power generator and a matching network disposed in the plasma processing chamber.

    PROCESSING CHAMBER WITH SUBSTRATE EDGE ENHANCEMENT PROCESSING
    3.
    发明申请
    PROCESSING CHAMBER WITH SUBSTRATE EDGE ENHANCEMENT PROCESSING 审中-公开

    公开(公告)号：US20200152431A1

    公开(公告)日：2020-05-14

    申请号：US16189440

    申请日：2018-11-13

    Applicant: Applied Materials, Inc.

    Inventor： Changhun LEE ,  Michael D. WILLWERTH ,  Valentin N. TODOROW ,  Hean Cheal LEE ,  Hun Sang KIM

    IPC: H01J37/32 ,  G03F7/42

    Abstract: Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

    COOLING MECHANISM UTLIZED IN A PLASMA REACTOR WITH ENHANCED TEMPERATURE REGULATION
    4.
    发明申请
    COOLING MECHANISM UTLIZED IN A PLASMA REACTOR WITH ENHANCED TEMPERATURE REGULATION 审中-公开
    具有增强温度调节的等离子体反应器中的冷却机构

    公开(公告)号：US20150279634A1

    公开(公告)日：2015-10-01

    申请号：US14242473

    申请日：2014-04-01

    Applicant: Applied Materials, Inc.

    Inventor： Aniruddha PAL ,  Victor CALDERON ,  Martin Jeffrey SALINAS ,  Valentin N. TODOROW

    IPC: H01J37/32

    CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32633

    Abstract: Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.

    Abstract translation: 本发明的实施例通常提供在等离子体反应器中使用的冷却机构，其可以在等离子体工艺期间提供有效的温度控制。 在一个实施例中，设置在等离子体处理设备中的冷却机构包括形成在处理室中的线圈天线外壳，设置在线圈天线外壳中的线圈天线组件，设置在线圈天线外壳中的多个空气循环元件 线圈天线​​组件，以及设置在线圈天线外壳中并与线圈天线组件相邻的挡板。

    ENHANCED PLASMA SOURCE FOR A PLASMA REACTOR
    6.
    发明申请
    ENHANCED PLASMA SOURCE FOR A PLASMA REACTOR 审中-公开
    增强等离子体反应器的等离子体源

    公开(公告)号：US20140367046A1

    公开(公告)日：2014-12-18

    申请号：US14293516

    申请日：2014-06-02

    Applicant: Applied Materials, Inc.

    Inventor： Valentin N. TODOROW ,  Gary LERAY ,  Michael D. WILLWERTH ,  Li-Sheng CHIANG

    IPC: H01J37/32 ,  H01L21/67 ,  H05H1/46 ,  H01L21/02

    CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/32532 ,  H05H1/46 ,  H05H2001/4645 ,  H05H2001/4667

    Abstract: Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.

    Abstract translation: 提供了具有可在处理室中提供增强的等离子体的改进的线圈天线组件的设备的实施例。 改进的线圈天线组件增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。 在一个实施例中，配置成在半导体处理装置中使用的电极组件包括RF导电连接器和具有电连接到RF导电连接器的第一端的导电构件，其中导电构件从RF导电连接器向外和垂直地延伸 。

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