公开(公告)号：US20140367046A1

公开(公告)日：2014-12-18

申请号：US14293516

申请日：2014-06-02

Applicant: Applied Materials, Inc.

Inventor： Valentin N. TODOROW ,  Gary LERAY ,  Michael D. WILLWERTH ,  Li-Sheng CHIANG

IPC: H01J37/32 ,  H01L21/67 ,  H05H1/46 ,  H01L21/02

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/32532 ,  H05H1/46 ,  H05H2001/4645 ,  H05H2001/4667

Abstract: Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.

Abstract translation: 提供了具有可在处理室中提供增强的等离子体的改进的线圈天线组件的设备的实施例。 改进的线圈天线组件增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。 在一个实施例中，配置成在半导体处理装置中使用的电极组件包括RF导电连接器和具有电连接到RF导电连接器的第一端的导电构件，其中导电构件从RF导电连接器向外和垂直地延伸 。

公开(公告)号：US20150130354A1

公开(公告)日：2015-05-14

申请号：US14537037

申请日：2014-11-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Gary LERAY ,  Valentin Nikolov TODOROW

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32183

Abstract: Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power.

Abstract translation: 本文提供了使用双电平脉冲功率的处理室中频率调谐的方法和装置。 在一些实施例中，用于频率调谐的方法可以包括：在第一频率被调整到第二频率的同时提供第一频率的第一脉冲功率，其中第一频率是第一脉冲功率处的最后已知的调谐频率， 频率作为第一脉冲功率处的最后已知的调谐频率，在第三频率被调整到第四频率时提供第二脉冲功率，其中第一脉冲功率和第二脉冲功率不同且不为零， 并且其中所述第三频率是所述第二脉冲功率处的最后已知的调谐频率，并且将所述第四频率存储为所述第二脉冲功率处的最后已知的调谐频率。

公开(公告)号：US20200381214A1

公开(公告)日：2020-12-03

申请号：US16429883

申请日：2019-06-03

Applicant: Applied Materials, Inc.

Inventor： Gary LERAY ,  Valentin N. TODOROW ,  James ROGERS

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/3213

Abstract: Embodiments for the present application include methods and apparatus for operating a plasma enhanced substrate processing system using dual level pulsed radio frequency (RF) power. More specifically, embodiments of the present disclosure allow for frequency and power tuning in a process chamber using dual level pulsed power by using a tuning controller coupled to a matching network and/or a RF power generator. In one embodiment, a tuning system includes a tuning controller disposed in a tuning system, the tuning controller configured to tune dual level RF pulsing data from a RF power generator, wherein the tuning system is connectable to a plasma processing chamber, and a memory connecting to the tuning controller, wherein the tuning controller is configured to couple to a RF power generator and a matching network disposed in the plasma processing chamber.