Invention Application
- Patent Title: ENHANCED PLASMA SOURCE FOR A PLASMA REACTOR
- Patent Title (中): 增强等离子体反应器的等离子体源
-
Application No.: US14293516Application Date: 2014-06-02
-
Publication No.: US20140367046A1Publication Date: 2014-12-18
- Inventor: Valentin N. TODOROW , Gary LERAY , Michael D. WILLWERTH , Li-Sheng CHIANG
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67 ; H05H1/46 ; H01L21/02

Abstract:
Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.
Public/Granted literature
- US10290469B2 Enhanced plasma source for a plasma reactor Public/Granted day:2019-05-14
Information query