公开(公告)号：US20210280391A1

公开(公告)日：2021-09-09

申请号：US16812144

申请日：2020-03-06

Applicant: Applied Materials, Inc.

Inventor： Matthew SPULLER ,  Dongming IU

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/46 ,  H01L21/66 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to apparatus, systems and methods for managing organic compounds in thermal processing chambers. A gas line can be in fluid communication with the thermal processing chamber and an exhaust pump can be coupled to the thermal processing chamber by an exhaust conduit and controlled by an effluent flow control valve. The apparatus includes a sampling line with an organic compound sensor coupled to the exhaust conduit. The organic compound sensor can be in communication with a control module which can control operating parameters for processing a substrate.

公开(公告)号：US20210280418A1

公开(公告)日：2021-09-09

申请号：US17123386

申请日：2020-12-16

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Abhilash J. MAYUR ,  Shashank SHARMA ,  Norman L. TAM ,  Matthew SPULLER ,  Zeqiong ZHAO

IPC: H01L21/02 ,  H01L27/11556

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.

公开(公告)号：US20230127138A1

公开(公告)日：2023-04-27

申请号：US17892968

申请日：2022-08-22

Applicant: Applied Materials, Inc.

Inventor： Wei LIU ,  Shashank SHARMA ,  Matthew SPULLER ,  Vladimir NAGORNY

IPC: C23C8/36 ,  H01J37/32 ,  H01L21/02 ,  C23C8/24

Abstract: In an embodiment, a method for nitriding a substrate is provided. The method includes flowing a nitrogen-containing source and a carrier gas into a plasma processing source coupled to a chamber such that a flow rate of the nitrogen-containing source is from about 3% to 20% of a flow rate of the carrier gas; generating an inductively-coupled plasma (ICP) in the plasma processing source by operating an ICP source, the ICP comprising a radical species formed from the nitrogen-containing source, the carrier gas, or both; and nitriding the substrate within the chamber, wherein nitriding includes operating a heat source within the chamber at a temperature from about 150° C. to about 650° C. to heat the substrate; maintaining a pressure of the chamber from about 50 mTorr to about 2 Torr; introducing the ICP to the chamber; and adjusting a characteristic of the substrate by exposing the substrate to the radical species.

公开(公告)号：US20220108914A1

公开(公告)日：2022-04-07

申请号：US17398899

申请日：2021-08-10

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Shashank SHARMA ,  Abhilash J. MAYUR ,  Norman L. TAM ,  Matthew SPULLER

IPC: H01L21/768 ,  H01L27/108

Abstract: Embodiments herein are directed to methods of forming titanium nitride films suitable for use as a bulk fill material for conductive features in a semiconductor device, such as for capacitor electrodes and/or buried word lines in a dynamic random-access memory (DRAM) device. In one embodiment, a method of forming conductive features in a semiconductor device is provided. The method includes thermally treating a substrate surface comprising at least portions of a titanium nitride layer in the presence of hydrogen radicals. Thermally treating the substrate includes positioning the substrate in a processing volume of a processing chamber, heating the substrate to a treatment temperature of more than about 250° C., generating the hydrogen radicals using a remote plasma source fluidly coupled to the processing volume, and maintaining the substrate at the treatment temperature while concurrently exposing the at least portions of the titanium nitride layer to the generated hydrogen radicals. Here, the substrate includes a field surface having a plurality of openings formed therein and the at least portions of the titanium nitride layer are disposed in the plurality of openings.

公开(公告)号：US20180337075A1

公开(公告)日：2018-11-22

申请号：US15982785

申请日：2018-05-17

Applicant: Applied Materials, Inc.

Inventor： Dongming IU ,  Kartik SHAH ,  Norman L. TAM ,  Matthew SPULLER ,  Jau-Jiun CHEN ,  Kong Lung Samuel CHAN ,  Elizabeth NEVILLE ,  Preetham RAO ,  Abhilash J. MAYUR ,  Gia Pham

IPC: H01L21/67 ,  C23C16/56 ,  C23C16/458 ,  C23C16/455

Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

公开(公告)号：US20240087889A1

公开(公告)日：2024-03-14

申请号：US18513008

申请日：2023-11-17

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Abhilash J. MAYUR ,  Shashank SHARMA ,  Norman L. TAM ,  Matthew SPULLER

IPC: H01L21/02 ,  H01L21/30 ,  H10B41/27

CPC classification number: H01L21/02667 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/3003 ,  H10B41/27 ,  H01L21/02164 ,  H01L21/02532 ,  H10B43/27

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm. The substrate is maintained at a temperature of about 100° C. to about 1100° C. during the exposing, the exposing forming a nucleated substrate. Subsequent to the exposing a thermal anneal operation is performed on the substrate.

公开(公告)号：US20210280428A1

公开(公告)日：2021-09-09

申请号：US17174395

申请日：2021-02-12

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Abhilash J. MAYUR ,  Shashank SHARMA ,  Norman L. TAM ,  Matthew SPULLER

IPC: H01L21/30 ,  H01L21/02

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm. The substrate is maintained at a temperature of about 100° C. to about 1100° C. during the exposing, the exposing forming a nucleated substrate. Subsequent to the exposing a thermal anneal operation is performed on the substrate.

公开(公告)号：US20170294292A1

公开(公告)日：2017-10-12

申请号：US15480187

申请日：2017-04-05

Applicant: Applied Materials, Inc.

Inventor： Lara HAWRYLCHAK ,  Matthew D. SCOTNEY-CASTLE ,  Norman L. TAM ,  Matthew SPULLER ,  Kong Lung Samuel CHAN ,  Dongming IU

IPC: H01J37/32

CPC classification number: H01J37/32862 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32834 ,  H01J37/32899

Abstract: Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.