公开(公告)号：US20180342375A1

公开(公告)日：2018-11-29

申请号：US15606739

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Kartik RAMASWAMY ,  Michael G. CHAFIN ,  Yang YANG ,  Anilkumar RAYAROTH ,  Lu LIU

IPC: H01J37/32

Abstract: Embodiments of the disclosure relate to apparatus and method for tunable a plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.

公开(公告)号：US20240363315A1

公开(公告)日：2024-10-31

申请号：US18307931

申请日：2023-04-27

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Lu LIU ,  Toan Q. TRAN ,  Daniel NGUYEN

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32697 ,  H01J37/32724 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/20235 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/3321 ,  H01J2237/3327

Abstract: Aspects of the present disclosure generally relate to apparatus and methods for an adjustable de-chucking voltage associated with an electrostatically charged substrate in a processing chamber. An example method of de-chucking a substrate disposed in a process chamber includes processing a substrate in a chamber body, the substrate being coupled to a substrate support comprising a chucking electrode. The method further includes monitoring a property associated with a lift pin assembly movable relative to the chucking electrode via an actuator. The method further includes adjusting a first voltage level applied to the chucking electrode in response to the property associated with the lift pin assembly satisfying one or more criteria.

公开(公告)号：US20240087859A1

公开(公告)日：2024-03-14

申请号：US17940513

申请日：2022-09-08

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Andrew NGUYEN ,  Yang YANG ,  Sathya GANTA ,  Fernando SILVEIRA ,  Yue GUO ,  Lu LIU

IPC: H01J37/32

CPC classification number: H01J37/32862 ,  H01J37/32082 ,  H01J2237/334

Abstract: Methods and apparatus for forming plasma in a process chamber use an annular exciter formed of a first conductive material with a first end electrically connected to an RF power source that provides RF current and a second end connected to a ground and an annular applicator, physically separated from the annular exciter, formed of a second conductive material with at least one angular split with an angle forming an upper overlap portion and a lower overlap portion separated by a high K dielectric material which is configured to provide capacitance in conjunction with an inductance of the annular applicator to form a resonant circuit that is configured to resonate when the annular exciter flows RF current that inductively excites the annular applicator to a resonant frequency which forms azimuthal plasma from the annular applicator.

公开(公告)号：US20200152423A1

公开(公告)日：2020-05-14

申请号：US16601241

申请日：2019-10-14

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Michael G. CHAFIN ,  Lu LIU ,  Anilkumar RAYAROTH

IPC: H01J37/32 ,  H03H7/01

Abstract: A radio frequency (RF) filter system for a substrate processing chamber comprises a first RF filter coupled to a first element of the processing chamber and a second RF filter coupled to the first element of the processing chamber. Each of the RF filters comprises a first filter stage configured to reject a first frequency, a second filter stage coupled to the first filter stage and configured to reject a second frequency, and a third filter stage coupled to the second filter stage and configured to reject the first frequency. Further, the first filter stage comprises a first inductor and a first capacitance, the second filter stage comprises a second inductor and a second capacitance, the third filter stage comprises a third inductor and a third capacitance.

公开(公告)号：US20150294843A1

公开(公告)日：2015-10-15

申请号：US14249042

申请日：2014-04-09

Applicant: Applied Materials, Inc.

Inventor： Feng CHEN ,  Benjamin SCHWARZ ,  Valentin N. TODOROW ,  Li ZHANG ,  Tza-Jing GUNG ,  Lu LIU

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32862 ,  H01J37/32853

Abstract: Embodiments of the present invention generally provide chamber cleaning methods for cleaning a plasma processing chamber with minimum likelihood of erosion occurred on the chamber components so as to extend service life of chamber components for semiconductor plasma applications. In one embodiment, a method of extending chamber component life in a processing chamber includes supplying a cleaning gas mixture into a plasma processing chamber, applying a RF source power to the plasma processing chamber, and applying a voltage to a substrate support assembly disposed in the processing chamber during cleaning.

Abstract translation: 本发明的实施例通常提供用于清洁等离子体处理室的室清洁方法，其中在室部件上发生最小的侵蚀可能性，以延长半导体等离子体应用的室部件的使用寿命。 在一个实施例中，一种在处理室中延长腔室部件寿命的方法包括将清洁气体混合物供应到等离子体处理室中，将RF源功率施加到等离子体处理室，以及向设置在等离子体处理室中的衬底支撑组件施加电压 处理室清洁。

公开(公告)号：US20230386823A1

公开(公告)日：2023-11-30

申请号：US17829288

申请日：2022-05-31

Applicant: Applied Materials, Inc.

Inventor： Kaushik ALAYAVALLI ,  Andrew NGUYEN ,  Edward HAYWOOD ,  Lu LIU ,  Malav KAPADIA

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02087 ,  H01J37/3244 ,  H01J2237/335

Abstract: Embodiments disclosed herein include a method for cleaning a bevel area of a substrate support disposed within a plasma processing chamber. In one example the method begins by placing a cover substrate on a substrate support disposed in an interior volume of a processing chamber. A cleaning gas is provided into the interior volume of the processing chamber. A plasma is struck in the interior volume of the processing chamber. A cleaning gas is provided through the substrate support to a bevel edge area defined between an outer diameter of the cover substrate and an edge ring disposed on the substrate support.