公开(公告)号：US20230123089A1

公开(公告)日：2023-04-20

申请号：US18083173

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Daemian Raj Benjamin RAJ ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Gregory Eugene CHICHKANOFF ,  Xinhai HAN ,  Masaki OGATA ,  Kristopher ENSLOW ,  Wenjiao WANG

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US20200173022A1

公开(公告)日：2020-06-04

申请号：US16678996

申请日：2019-11-08

Applicant: Applied Materials, Inc.

Inventor： Xinhai HAN ,  Deenesh PADHI ,  Daemian Raj BENJAMIN RAJ ,  Kristopher ENSLOW ,  Wenjiao WANG ,  Masaki OGATA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Gregory Eugene CHICHKANOFF ,  Shailendra SRIVASTAVA ,  Jonghoon BAEK ,  Zakaria IBRAHIMI ,  Juan Carlos ROCHA-ALVAREZ ,  Tza-Jing GUNG

IPC: C23C16/455 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  C23C16/40 ,  C23C16/34 ,  H01J37/32

Abstract: Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

公开(公告)号：US20240044000A1

公开(公告)日：2024-02-08

申请号：US18381534

申请日：2023-10-18

Applicant: Applied Materials, Inc.

Inventor： Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Daemian Raj BENJAMIN RAJ ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Gregory Eugene CHICHKANOFF ,  Xinhai HAN ,  Masaki OGATA ,  Kristopher ENSLOW ,  Wenjiao WANG

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

CPC classification number: C23C16/45565 ,  H01J37/32458 ,  H01J37/3244 ,  C23C16/50 ,  C23C16/45536 ,  C23C16/4583 ,  H01J2237/3321

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.