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1.发明公开公开(公告)号：US20230408807A1
公开(公告)日：2023-12-21
申请号：US17750751
申请日：2022-05-23
Applicant: Applied Materials, Inc.
Inventor： Thomas L. Laidig , Christopher Bencher , Hwan J. Jeong , Uwe Hollerbach
CPC classification number: G02B26/0833 , G03F7/70258 , G03F7/70575 , G02B27/30
Abstract: A digital lithography system may adjust a wavelength of the light source to compensate for tilt errors in micromirrors while maintaining a perpendicular direction for the reflected light. Adjacent pixels may have a phase shift that is determined by an optical path difference between their respective light beams. This phase shift may be preselected to be any value by generating a corresponding wavelength at the light source based on the optical path difference. To generate a specific wavelength corresponding to the desired phase shift, the light source may produce multiple light components that have wavelengths that bracket the wavelength of the selected phase shift. The intensities of these components may then be controlled individually to produce an effect that approximates the selected phase shift on the substrate.
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2.发明公开公开(公告)号：US20240184097A1
公开(公告)日：2024-06-06
申请号：US18440727
申请日：2024-02-13
Applicant: Applied Materials, Inc.
Inventor： Thomas L. Laidig , Christopher Bencher , Hwan J. Jeong , Uwe Hollerbach
CPC classification number: G02B26/0833 , G02B27/30 , G03F7/70258 , G03F7/70575
Abstract: A digital lithography system may adjust a wavelength of the light source to compensate for tilt errors in micromirrors while maintaining a perpendicular direction for the reflected light. Adjacent pixels may have a phase shift that is determined by an optical path difference between their respective light beams. This phase shift may be preselected to be any value by generating a corresponding wavelength at the light source based on the optical path difference. To generate a specific wavelength corresponding to the desired phase shift, the light source may produce multiple light components that have wavelengths that bracket the wavelength of the selected phase shift. The intensities of these components may then be controlled individually to produce an effect that approximates the selected phase shift on the substrate.
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公开(公告)号：US20240044863A1
公开(公告)日：2024-02-08
申请号：US18365867
申请日：2023-08-04
Applicant: Applied Materials, Inc.
Inventor： Christopher Bencher
IPC: G01N33/483 , G01N21/17
CPC classification number: G01N33/4833 , G01N21/17 , G01N2021/1787 , G01N2201/1087
Abstract: An imaging system for capturing spatial images of biological tissue samples may include an imaging chamber configured to hold a biological tissue sample placed in the imaging system; a light source configured to illuminate the biological tissue sample to activate one or more fluorophores in the biological tissue sample; a Time Delay and Integration (TDI) imager comprising a plurality of partitions, where the plurality of partitions may be configured to capture images at a plurality of different depths in the biological tissue sample simultaneously during a scan by the TDI imager; and a controller configured to cause the TDI imager to scan the biological tissue sample.
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公开(公告)号：US11822253B2
公开(公告)日：2023-11-21
申请号：US17740960
申请日：2022-05-10
Applicant: Applied Materials, Inc.
Inventor： Joseph Johnson , Christopher Bencher
CPC classification number: G03F7/7055
Abstract: Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.
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公开(公告)号：US10108093B2
公开(公告)日：2018-10-23
申请号：US15782425
申请日：2017-10-12
Applicant: Applied Materials, Inc.
Inventor： Peng Xie , Ludovic Godet , Christopher Bencher
Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.
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Patent Agency Ranking
公开(公告)号：US20220357665A1
公开(公告)日：2022-11-10
申请号：US17740960
申请日：2022-05-10
Applicant: Applied Materials, Inc.
Inventor： Joseph Johnson , Christopher Bencher
IPC: G03F7/20
Abstract: Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.
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公开(公告)号：US09798240B2
公开(公告)日：2017-10-24
申请号：US14472306
申请日：2014-08-28
Applicant: Applied Materials, Inc.
Inventor： Peng Xie , Ludovic Godet , Christopher Bencher
CPC classification number: G03F7/38 , G03F7/0045 , G03F7/26
Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.
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8.发明授权Multi-beam pattern generators employing yaw correction when writing upon large substrates, and associated methods 有权在大基板上写入时采用偏转校正的多光束图案发生器及相关方法公开(公告)号：US09395631B2
公开(公告)日：2016-07-19
申请号：US14242690
申请日：2014-04-01
Applicant: Applied Materials, Inc.
Inventor： Christopher Bencher
IPC: G03F7/20
CPC classification number: G03F7/70275 , G03F7/70291
Abstract: Multi-beam pattern generators employing yaw correction when writing upon large substrates, and associated methods are disclosed. A multi-beam pattern generator may include a spatial light modulator (SLM) with independently controllable mirrors to reflect light onto a substrate to write a pattern. The pattern may be written in writing cycles where the substrate is moved to writing cycle zone locations. The light is reflected by the SLM onto the substrate by mirrors of the SLM in active positions to write the pattern upon the substrate. By determining a location and yaw of the substrate with respect to the SLM in each writing cycle, some mirrors of the SLM may be digitally controlled to either inactive positions or the active positions to compensate for the yaw of the substrate. In this manner, the pattern written upon the substrate may be precisely written with compensation for yaw.
Abstract translation: 公开了在大基板上写入时使用偏航校正的多光束图案发生器以及相关联的方法。 多光束图案发生器可以包括具有独立可控反射镜的空间光调制器（SLM），以将光反射到衬底上以写入图案。 该图案可以以写入周期写入，其中衬底被移动到写入周期区域位置。 通过SLM的反射镜将SLM的SLM反射到衬底上，从而将图案写入衬底。 通过在每个写周期中确定衬底相对于SLM的位置和偏转，SLM的一些反射镜可以被数字地控制到无效位置或有效位置以补偿衬底的偏转。 以这种方式，写入衬底的图案可以精确地写入偏航补偿。
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公开(公告)号：US11899198B2
公开(公告)日：2024-02-13
申请号：US17750751
申请日：2022-05-23
Applicant: Applied Materials, Inc.
Inventor： Thomas L. Laidig , Christopher Bencher , Hwan J. Jeong , Uwe Hollerbach
CPC classification number: G02B26/0833 , G02B27/30 , G03F7/70258 , G03F7/70575
Abstract: A digital lithography system may adjust a wavelength of the light source to compensate for tilt errors in micromirrors while maintaining a perpendicular direction for the reflected light. Adjacent pixels may have a phase shift that is determined by an optical path difference between their respective light beams. This phase shift may be preselected to be any value by generating a corresponding wavelength at the light source based on the optical path difference. To generate a specific wavelength corresponding to the desired phase shift, the light source may produce multiple light components that have wavelengths that bracket the wavelength of the selected phase shift. The intensities of these components may then be controlled individually to produce an effect that approximates the selected phase shift on the substrate.
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公开(公告)号：US09377692B2
公开(公告)日：2016-06-28
申请号：US14301184
申请日：2014-06-10
Applicant: Applied Materials, Inc.
Inventor： Peng Xie , Ludovic Godet , Tristan Ma , Joseph C. Olson , Christopher Bencher
Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.
Abstract translation: 提供了通过光刻形成的线中的线边缘/宽度粗糙度最小化的方法和装置。 在光刻过程中由光致酸发生器产生的酸的随机扩散有助于线边缘/宽度粗糙度。 本文公开的方法在光刻工艺期间施加电场和/或磁场。 场应用控制由光致酸发生器沿线和间隔方向产生的酸的扩散，防止由随机扩散引起的线边缘/宽度粗糙度。 用于实施上述方法的装置也在此公开。
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