公开(公告)号：US20240352574A1

公开(公告)日：2024-10-24

申请号：US18303318

申请日：2023-04-19

Applicant: Applied Materials, Inc.

Inventor： Sundarapandian Ramaling Vijayalaskshmi REDDY ,  Jianxin LEI ,  Kirankumar Neelasandra SAVANDAIAH ,  Zheyuan CHEN ,  Avinash NAYAK

IPC: C23C14/34 ,  C23C14/00 ,  C23C14/06

CPC classification number: C23C14/34 ,  C23C14/0036 ,  C23C14/0641 ,  H01J37/3244 ,  H01J37/3417 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/332

Abstract: A process kit assembly for a process station that includes a cover ring and a shield. The shield includes a lower shield portion configured to interleave with the cover ring. The shield also includes an upper shield portion including a shield port extending from an inner side to an outer side of the upper shield portion. The upper shield portion further includes a shadow surface formed on the inner side configured to shadow the shield port from sputtering deposits. The upper shield portion further includes an upper shield shoulder formed on the outer side. The upper shield portion further includes a lower shield shoulder formed on a lower end of the upper shield portion. The upper shield portion is engageable with an adapter to form an annular chamber around the outer side between the upper shield shoulder and the lower shield shoulder.

公开(公告)号：US20240093355A1

公开(公告)日：2024-03-21

申请号：US17950046

申请日：2022-09-21

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Zheyuan CHEN ,  Irena H. WYSOK ,  Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Avinash NAYAK ,  Jianxin LEI

IPC: C23C14/34 ,  C23C14/50

CPC classification number: C23C14/3421 ,  C23C14/3435 ,  C23C14/3485 ,  C23C14/50

Abstract: Methods and apparatus reduce defects in substrates processed in a physical vapor (PVD) chamber. In some embodiments, a method for cleaning a process kit disposed in an inner volume of a process chamber includes positioning a glassy carbon shutter disk on a substrate support of the PVD chamber; energizing an oxygen-containing cleaning gas disposed in the inner volume of the PVD chamber to create a plasma reactive with carbon-based materials; and heating the process kit having a carbon-based material adhered thereto while exposed to the plasma to remove at least a portion of the carbon-based material adhered to the process kit.

公开(公告)号：US20230122956A1

公开(公告)日：2023-04-20

申请号：US17506075

申请日：2021-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Halbert CHONG ,  John C. FORSTER ,  Irena H. WYSOK ,  Tiefeng SHI ,  Gang FU ,  Renu WHIG ,  Keith A. MILLER ,  Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Jianxin LEI ,  Rongjun WANG ,  Tza-Jing GUNG ,  Kirankumar Neelasandra SAVANDAIAH ,  Avinash NAYAK ,  Lei ZHOU

IPC: C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.