Detecting and correcting hard errors in a memory array
    3.
    发明授权
    Detecting and correcting hard errors in a memory array 有权
    检测和纠正存储器阵列中的硬错误

    公开(公告)号:US09189326B2

    公开(公告)日:2015-11-17

    申请号:US14048830

    申请日:2013-10-08

    Abstract: Hard errors in the memory array can be detected and corrected in real-time using reusable entries in an error status buffer. Data may be rewritten to a portion of a memory array and a register in response to a first error in data read from the portion of the memory array. The rewritten data may then be written from the register to an entry of an error status buffer in response to the rewritten data read from the register differing from the rewritten data read from the portion of the memory array.

    Abstract translation: 可以使用错误状态缓冲区中的可重用条目实时检测和校正存储器阵列中的硬错误。 响应于从存储器阵列的部分读取的数据中的第一个错误,数据可以重写到存储器阵列和寄存器的一部分。 然后可以将重写的数据从寄存器写入错误状态缓冲器的条目,以响应于从寄存器读取的重写数据与从存储器阵列的部分读取的重写数据不同。

    DETECTING AND CORRECTING HARD ERRORS IN A MEMORY ARRAY
    5.
    发明申请
    DETECTING AND CORRECTING HARD ERRORS IN A MEMORY ARRAY 有权
    检测和校正存储器阵列中的硬错误

    公开(公告)号:US20150100848A1

    公开(公告)日:2015-04-09

    申请号:US14048830

    申请日:2013-10-08

    Abstract: Hard errors in the memory array can be detected and corrected in real-time using reusable entries in an error status buffer. Data may be rewritten to a portion of a memory array and a register in response to a first error in data read from the portion of the memory array. The rewritten data may then be written from the register to an entry of an error status buffer in response to the rewritten data read from the register differing from the rewritten data read from the portion of the memory array.

    Abstract translation: 可以使用错误状态缓冲区中的可重用条目实时检测和校正存储器阵列中的硬错误。 响应于从存储器阵列的部分读取的数据中的第一个错误,数据可以重写到存储器阵列和寄存器的一部分。 然后可以将重写的数据从寄存器写入错误状态缓冲器的条目,以响应于从寄存器读取的重写数据与从存储器阵列的部分读取的重写数据不同。

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