公开(公告)号：US11894547B2

公开(公告)日：2024-02-06

申请号：US17066130

申请日：2020-10-08

申请人： ULVAC Technologies, Inc.

发明人： Isaiah O. Oladeji ,  Akiyoshi Suzuki ,  Koukou Suu

IPC分类号： H01M4/36 ,  H01M4/52 ,  H01M4/50 ,  H01M4/04 ,  H01M4/58 ,  H01M10/0525 ,  H01M4/525 ,  H01M4/505 ,  H01M4/587 ,  H01M4/583 ,  H01M4/62 ,  H01M4/66 ,  H01M4/74 ,  H01M4/02

CPC分类号： H01M4/366 ,  H01M4/0404 ,  H01M4/0435 ,  H01M4/0471 ,  H01M4/505 ,  H01M4/525 ,  H01M4/583 ,  H01M4/587 ,  H01M4/5825 ,  H01M4/623 ,  H01M4/662 ,  H01M4/74 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/027 ,  H01M2004/028

摘要： An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1≤x≤4, 0≤y≤1, 1≤z≤2, and 3≤w≤6.

公开(公告)号：US20180174801A1

公开(公告)日：2018-06-21

申请号：US15387311

申请日：2016-12-21

申请人： ULVAC Technologies, Inc.

发明人： Wei CHEN ,  Kevin Michael MCCORMICK

IPC分类号： H01J37/32 ,  B08B7/00

CPC分类号： H01J37/3211 ,  H01J37/32183 ,  H01J37/3244 ,  H01J2237/335 ,  H01J2237/338

摘要： According to an exemplary embodiment, a surface treatment unit comprises a chamber, a process gas inlet configured to allow process gas to enter the chamber, a first and a second plasma source, and a first RF antenna inductively coupled to the first plasma source and a second RF antenna inductively coupled to the second plasma source. The first and second RF antennas are configured to simultaneously ignite a first and second plasma, and the first and second plasma sources are configured to simultaneously supply the first and second plasma to a work-piece within the chamber.

公开(公告)号：US20230216038A1

公开(公告)日：2023-07-06

申请号：US18177350

申请日：2023-03-02

申请人： ULVAC Technologies, Inc.

发明人： Isaiah O. OLADEJI ,  Akiyoshi SUZUKI ,  Koukou SUU

IPC分类号： H01M10/0525 ,  H01M4/62 ,  H01M4/583 ,  H01M4/525 ,  H01M4/58 ,  H01M4/04 ,  H01M4/74 ,  H01M4/66

CPC分类号： H01M10/0525 ,  H01M4/623 ,  H01M4/583 ,  H01M4/525 ,  H01M4/5825 ,  H01M4/0471 ,  H01M4/0404 ,  H01M4/74 ,  H01M4/662 ,  H01M2004/028

摘要： An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1≤x≤4, 0≤y≤1, 1≤z≤2, and 3≤w≤6.

公开(公告)号：US12021229B2

公开(公告)日：2024-06-25

申请号：US18177350

申请日：2023-03-02

申请人： ULVAC Technologies, Inc. ,  Sisom Thin Films LLC

发明人： Isaiah O. Oladeji ,  Akiyoshi Suzuki ,  Koukou Suu

IPC分类号： H01M4/36 ,  H01M4/04 ,  H01M4/505 ,  H01M4/525 ,  H01M4/58 ,  H01M4/583 ,  H01M4/587 ,  H01M4/62 ,  H01M4/66 ,  H01M4/74 ,  H01M10/0525 ,  H01M4/02

CPC分类号： H01M4/366 ,  H01M4/0404 ,  H01M4/0435 ,  H01M4/0471 ,  H01M4/505 ,  H01M4/525 ,  H01M4/5825 ,  H01M4/583 ,  H01M4/587 ,  H01M4/623 ,  H01M4/662 ,  H01M4/74 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/027 ,  H01M2004/028

摘要： An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1≤x≤4, 0≤y≤1, 1≤z≤2, and 3≤w≤6.

公开(公告)号：US20210104738A1

公开(公告)日：2021-04-08

申请号：US17066130

申请日：2020-10-08

申请人： ULVAC Technologies, Inc.

发明人： Isaiah O. OLADEJI ,  Akiyoshi SUZUKI ,  Koukou SUU

IPC分类号： H01M4/36 ,  H01M4/525 ,  H01M4/505 ,  H01M4/04 ,  H01M4/587

摘要： An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1≤x≤4, 0≤y≤1, 1≤z≤2, and 3≤w≤6.

公开(公告)号：US20200098986A1

公开(公告)日：2020-03-26

申请号：US16136464

申请日：2018-09-20

申请人： International Business Machines Corporation ,  ULVAC Technologies, Inc.

发明人： Gloria Wing Yun FRACZAK, Fraczak ,  Matthew BRIGHTSKY ,  Chung Hon LAM ,  Fabio CARTA ,  Robert BRUCE ,  Takeshi MASUDA ,  Koukou Suu

IPC分类号： H01L45/00

摘要： Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.

公开(公告)号：US10770656B2

公开(公告)日：2020-09-08

申请号：US16136464

申请日：2018-09-20

申请人： International Business Machines Corporation ,  ULVAC Technologies, Inc.

发明人： Gloria Wing Yun Fraczak ,  Matthew Brightsky ,  Chung Hon Lam ,  Fabio Carta ,  Robert Bruce ,  Takeshi Masuda ,  Koukou Suu

IPC分类号： H01L45/00

摘要： Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.

公开(公告)号：US20180005821A1

公开(公告)日：2018-01-04

申请号：US15198537

申请日：2016-06-30

申请人： International Business Machines Corporation ,  ULVAC Technologies, Inc.

发明人： Takashi Ando ,  Vijay Narayanan ,  Yohei Ogawa ,  John Rozen

IPC分类号： H01L21/02

CPC分类号： H01L21/02304 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301

摘要： A technique relates to in-situ cleaning of a high-mobility substrate. Alternating pulses of a metal precursor and exposure to a plasma of a gas or gas mixture are applied. The gas or gas mixture contains both nitrogen and hydrogen (e.g., NH3). A passivation layer is formed on the high-mobility substrate by alternating pulses of the metal precursor and exposure to the plasma of a gas, or gas mixture, containing both nitrogen and hydrogen.