摘要:
A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.
摘要:
A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.
摘要:
A method of controlling processing of a substrate includes generating, based on a signal from an in-situ monitoring system, first and second sequences of characterizing values indicative of a physical property of a reference zone and a control zone, respectively, on a substrate. A reference zone rate and a control zone rate are determined from the first and sequence of characterizing values, respectively. An error value is determined by comparing characterizing values for the reference zone and control zone. An output parameter value for the control zone us generated based on at least the error value and a dynamic nominal control zone value using a proportional-integral-derivative control algorithm, and the dynamic nominal control zone value is generated in a second control loop based on at least the reference zone rate and the control zone rate. The control zone of the substrate is processed according to the output parameter value.