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公开(公告)号：CN102064120B
公开(公告)日：2012-02-15
申请号：CN201010515444.0
申请日：2010-10-22
Applicant: 中国科学院上海微系统与信息技术研究所
CPC classification number: H01L24/11 , C25D3/46 , C25D3/54 , C25D5/02 , C25D5/10 , C25D5/50 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/94 , H01L2224/0345 , H01L2224/03462 , H01L2224/0347 , H01L2224/03849 , H01L2224/0401 , H01L2224/05082 , H01L2224/05083 , H01L2224/05147 , H01L2224/05166 , H01L2224/05666 , H01L2224/11462 , H01L2224/11502 , H01L2224/11825 , H01L2224/11849 , H01L2224/13099 , H01L2224/13109 , H01L2224/13562 , H01L2224/13639 , H01L2224/94 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1461 , H01L2924/00014 , H01L2224/05647 , H01L2224/11 , H01L2924/00
Abstract: 本发明涉及一种基于铟凸点的无助焊剂回流的工艺方法，其特征在于包括基板金属化、钝化层开口、凸点下金属化层增厚、电镀铟凸点、电镀银层包覆铟凸点、凸点回流。采用本发明提供的工艺可实现铟凸点阵列的无助焊回流，该工艺可应用于某些特殊的光电芯片，MEMS芯片和生物检测芯片中的倒装互连中。
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公开(公告)号：CN102064120A
公开(公告)日：2011-05-18
申请号：CN201010515444.0
申请日：2010-10-22
Applicant: 中国科学院上海微系统与信息技术研究所
CPC classification number: H01L24/11 , C25D3/46 , C25D3/54 , C25D5/02 , C25D5/10 , C25D5/50 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/94 , H01L2224/0345 , H01L2224/03462 , H01L2224/0347 , H01L2224/03849 , H01L2224/0401 , H01L2224/05082 , H01L2224/05083 , H01L2224/05147 , H01L2224/05166 , H01L2224/05666 , H01L2224/11462 , H01L2224/11502 , H01L2224/11825 , H01L2224/11849 , H01L2224/13099 , H01L2224/13109 , H01L2224/13562 , H01L2224/13639 , H01L2224/94 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1461 , H01L2924/00014 , H01L2224/05647 , H01L2224/11 , H01L2924/00
Abstract: 本发明涉及一种基于铟凸点的无助焊剂回流的工艺方法，其特征在于包括基板金属化、钝化层开口、凸点下金属化层增厚、电镀铟凸点、电镀银层包覆铟凸点、凸点回流。采用本发明提供的工艺可实现铟凸点阵列的无助焊回流，该工艺可应用于某些特殊的光电芯片，MEMS芯片和生物检测芯片中的倒装互连中。
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