A semiconductor memory device includes a first word line and a second word line that are adjacent to each other, a first voltage boosting circuit configured to generate a first voltage based on a clock signal, a second voltage boosting circuit configured to generate a second voltage lower than the first voltage based on the clock signal, a counter, and a determination circuit. The counter counts a first number of clock cycles of the clock signal during a first period in which the first voltage boosting circuit generates the first voltage and applies the first voltage to the first word line while the second voltage boosting circuit generates the second voltage and applies the second voltage to the second word line, and a second number of clock cycles of the clock signal during a second period in which the first voltage boosting circuit generates the first voltage while the first word line is electrically disconnected from the first voltage boosting circuit. The determination circuit compares the first number of clock cycles and the second number of clock cycles to determine whether or not a leakage exists in the word lines.