- 专利标题： Boost charge recycle for low-power memory
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申请号： US15476746申请日： 2017-03-31
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公开(公告)号： US09875790B1公开(公告)日： 2018-01-23
- 发明人: Rakesh Kumar Sinha , Priyankar Mathuria , Sharad Kumar Gupta , Lakshmikantha Holla Vakwadi
- 申请人： QUALCOMM Incorporated
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理机构： Haynes and Boone, LLP
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/419 ; G11C11/417
摘要：
A negative bit line boost circuit for a memory is configured to control a write multiplexer and a write assist transistor so that charge from a boost capacitor positively charges a bit line following a write assist period.
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