Invention Grant
- Patent Title: Semiconductor device having a gap defined therein
-
Application No.: US14341568Application Date: 2014-07-25
-
Publication No.: US09871121B2Publication Date: 2018-01-16
- Inventor: Jeffrey Junhao Xu , Kern Rim , John Jianhong Zhu , Stanley Seungchul Song , Mustafa Badaroglu , Vladimir Machkaoutsan , Da Yang , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated-Toler
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/49
Abstract:
In a particular embodiment, a method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap.
Public/Granted literature
- US20150255571A1 SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN Public/Granted day:2015-09-10
Information query
IPC分类:
