Invention Grant
- Patent Title: Semiconductor device having gate-all-around transistor and method of manufacturing the same
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Application No.: US15199502Application Date: 2016-06-30
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Publication No.: US09653361B2Publication Date: 2017-05-16
- Inventor: Dong-Il Bae , Kang-Ill Seo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/8238 ; H01L29/78 ; H01L27/088 ; H01L27/092 ; H01L29/66 ; H01L27/11 ; H01L29/423 ; H01L29/786
Abstract:
A semiconductor device includes a fin structure disposed on a substrate, a sacrificial layer pattern disposed on the fin structure, an active layer pattern disposed on the sacrificial layer pattern, and a gate dielectric layer and a gate electrode layer extending through the sacrificial layer pattern and surrounding a portion of the active layer pattern.
Public/Granted literature
- US20160315017A1 SEMICONDUCTOR DEVICE HAVING GATE-ALL-AROUND TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-10-27
Information query
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