- 专利标题: Semiconductor device and method of manufacturing the same
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申请号: US14966866申请日: 2015-12-11
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公开(公告)号: US09647084B2公开(公告)日: 2017-05-09
- 发明人: Shirou Ozaki , Naoya Okamoto , Kozo Makiyama , Toshihiro Ohki
- 申请人: FUJITSU LIMITED
- 申请人地址: JP Kawasaki
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: JP Kawasaki
- 代理机构: Kratz, Quintos & Hanson, LLP
- 优先权: JP2013-086099 20130416
- 主分类号: H02M5/45
- IPC分类号: H02M5/45 ; H01L29/66 ; H01L29/40 ; H01L21/768 ; H01L29/778 ; H01L29/205 ; H01L23/31 ; H01L29/20 ; H01L23/532 ; H01L21/283 ; H01L21/764 ; H02M5/458 ; H03F3/19 ; H01L23/522 ; H01L29/78
摘要:
A semiconductor device includes: a first electrode; a second electrode; an interlayer insulating film made of a porous insulating material and formed above the first electrode and the second electrode; and connection parts electrically connected to the first electrode and the second electrode respectively, wherein a cavity is formed between the interlayer insulating film and a surface of the first electrode, a surface of the second electrode, and parts of surfaces of the connection parts.
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